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VN770
QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS
VN770QUAD SMART POWER SOLID STATE RELAY
FOR COMPLETE H-BRIDGE CONFIGURATIONS
October 1998
SO-28
TYPE RDS(on) *IOUT VCCVN770 0.240Ω 9A 26V Total resistanceofone sidein bridge configuration IDEAL ASA LOW VOLTAGEBRIDGE VERY LOW STAND-BY POWER
DISSIPATION OVER-CURRENT PROTECTED STATUS FLAG DIAGNOSTICS ON UPPER
SIDE OPEN DRAIN DIAGNOSTICS OUTPUT UNDER-VOLTAGE PROTECTION SUITABLE AS QUAD SWITCH
DESCRIPTIONThe VN770 is a device formed by three
monolithic chips housedina standard SO-28
package:a double high side and two Power
MOSFETs. The double high side are made using
STMicroelectronics VIPower technology; Power
MOSFETs are madeby using the new advanced
strip lay-out technology. This deviceis suitableto
drivea DC motorina bridge configurationas wellto be used asa quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-downto protect the
chip from over temperature and short circuit,
status outputto provide indication for open load off and on state, overtemperature conditions
and stuck-onto VCC.
DUAL HIGH-SIDE SWITCH
From the falling edgeof the input signal, the
status output, initially low to signala fault
condition (overtemperature or open load
on-state), will go back toa high state witha
different delayin caseof overtemperature (tpovl)
andin caseof open open load (tpol) respectively.
This feature allowsto discriminate the natureof
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS offata minimum junction temperatureof
140oC. When this temperature returnsto 125oC
the switchis automatically turned on again.In
short circuit the protection reacts with virtuallyno
delay, the sensor (one for each channel) being
located inside eachof the two Power MOS areas.
This positioning allows the deviceto operate with
one channelin automatic thermal cycling and the
other one ona normal load. An internal function the devices ensures the fast demagnetization inductive loads witha typical voltage (Vdemag) -18V. This function allowsto greatly reduces
the power dissipation accordingto the formula:
Pdem =0.5• Lload• (Iload)2• [(VCC+Vdemag)/Vdemag]•f
wheref= switching frequency and
Vdemag= demagnetizationvoltage. this deviceif the GND pinis disconnected,with
VCC not exceeding 16V, both channel will switch
off.
Power MOSFETs
During normal operation, the Input pin is
electrically connectedto the gateof the internal
power MOSFET. The devices can be usedasa
switch from DCto very high frequency.
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BLOCK DIAGRAM
VN7702/10
CONNECTION DIAGRAM
PIN FUNCTION NAME FUNCTION3, 25,28 DRAIN3 Drainof Switch3 (low-side switch) INPUT3 Inputof Switch3 (low-side switch)11 N.C. Not Connected 10, 19,24 VCC Drainof Switches 1and2 (high-side switches) and Power Supply Voltage GND Groundof Switches1 and2 (high-side switches) INPUT1 Inputof Switch1 (high-side switch) DIAGNOSTIC Diagnosticof Switches1 and2 (high-side switches) INPUT2 Inputof Switch2 (high-side switch)
12, 14, 15,18 DRAIN4 Drainof Switch4 (low-side switch) INPUT4 Inputof Switch4 (low-side switch)
16,17 SOURCE4 Sourceof Switch4 (low-side switch)
20,21 SOURCE2 Sourceof Switch2 (high-side switch)
22,23 SOURCE1 Sourceof Switch1 (high-side switch)
26,27 SOURCE3 Sourceof Switch3 (low-side switch)
VN7703/10
PROTECTION CIRCUITSDUAL HIGH SIDE SWITCH
The simplest wayto protect the device againsta
continuous reverse battery voltage (-26V)isto
insertaa small resistor between pin2 (GND) and
ground. The suggested resistance valueis about
150Ω.In any case the maximum voltage drop on
this resistor should not overcome 0.5V. thereis no need for the control unitto handle
external analog signals referredto the power
GND, the best approachis to connect the
reference potentialof the control unit to the
device ground (see application circuitin fig. 3),
which becomes the common signal GND for the
whole control board avoiding shiftof Vih,Vil and
Vstat.
TRUTH TABLE (for Dual high-side switch only)
INPUT1 INPUT2 SOURCE1 SOURCE2 DIAGNOSTICNormal Operation L
Under-voltage X X L L H
Thermal Shutdown Channel1 HX L X L
Channel2 XH X L L
Open Load Channel1 H
Channel2 X
Output Shortedto VCC Channel1 H
Channel2 X
NOTE: The low-side switches havethe fault feedback which canbe detectedby monitoringthe voltageatthe input pins. =Logic LOW,H= Logic HIGH,X= Don’t care
ABSOLUTE MAXIMUM RATING (-40o C
HIGH SIDE SWITCH
Symbol Parameter Value Unit
V(BR)DSS Drain-Source Brekdown Voltage 40 V
IOUT Output Current (continuous) 9 A Reverse Output Current -9 A
IIN Input Current ±10 mA
-VCC Reverse Supply Current -4 V
ISTAT Status Current ±10 mA
VESD Electrostatic Discharge(C= 100 pF,R= 1.5 KΩ) 2000 V
Ptot Power Dissipation@Tc =25oC Internally Limited W Junction Operating Temperature -40to 150 oC
Tstg Storage Temperature -55to 150 oC
VN770
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LOW SIDE SWITCH
Symbol Parameter Value Unit
VDS Drain-Source Voltage (VGS =0) 60 V
VDGR Drain-Gate Voltage (RGS =20 KΩ) 60 V
VGS Gate-Source Voltage ±20 V Drain Current (continuous)@TC =25o C36 A Drain Current (continuous)@TC =100o C24 A
IDM(*) Drain Current (pulsed) 144 A
dv/dt(1) Peak Diode Recovery Voltage Slope 7 V/ns
Tstg Storage Temperature -55to 150 oC Junction Operating Temperature -40to 150 oC
THERMAL DATA
Rthj-case
Rthj-case
Rthj-amb
Thermal Resistance Junction-case (High-side switch) Max
Thermal Resistance Junction-case (Low-side switch) Max
Thermal Resistance Junction-ambient Max C/W C/W C/W
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH< VCC<16V; -40≤Tj≤ 125oC unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VCC Supply Voltage 6 13 26 V
In(*) Nominal Current Tc =85o CVDS(on)≤ 0.5 VCC =13V 1.6 2.6 A
Ron On State Resistance IOUT =In VCC =13V Tj =25oC 0.13 0.2 Ω Supply Current Off State Tj =25o CVCC=13V 35 100 μA
VDS(MAX) Maximum Voltage Drop IOUT =7.5A Tj =85o CVCC =13
1.44 2.3 V Outputto GND internal
Impedance =25o C5 10 20 KΩ
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)(^) Turn-on Delay TimeOf
Output Current
Rout =5.4Ω 525 200 μs
tr(^) Rise TimeOf Output
Current
Rout =5.4Ω 10 50 180 μs
td(off)(^) Turn-off Delay TimeOf
Output Current
Rout =5.4Ω 10 75 250 μs
tf(^) Fall TimeOf Output
Current
Rout =5.4Ω 10 35 180 μs
(di/dt)on Turn-on Current Slope Rout =5.4Ω 0.003 0.1 A/μs
(di/dt)off Turn-off Current Slope Rout =5.4Ω 0.005 0.1 A/μs
VN770
5/10
LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VIL Input Low Level
Voltage
1.5 V
VIH Input High Level
Voltage
3.5 (•)V
VI(hyst.) Input Hysteresis
Voltage
0.2 0.9 1.5 V
IIN Input Current VIN =5V Tj =25o C30 100 μA
VICL Input Clamp Voltage IIN =10 mA
IIN =-10 mA
PROTECTION AND DIAGNOSTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSTAT Status Voltage Output
Low
ISTAT =1.6 mA 0.4 V
VUSD Under Voltage Shut
Down
3.5 4.5 6 V
VSCL Status Clamp Voltage ISTAT =10 mA
ISTAT =-10 mA
TTSD Thermal Shut-down
Temperature
140 160 180 oC
TSD(hyst.) Thermal Shut-down
Hysteresis oC Reset Temperature 125 oC
VOL Open Voltage Level Off-State (note2) 2.5 4 5 V
IOL Open Load Current
Level
On-State 5 180 mA
tpovl Status Delay (note3) 5 10 μs
tpol Status Delay (note3) 50 500 2500 μs
(*)In= Nominal currentaccordingto ISO definitionfor high side automotive switch (see note1)
(^) See switchingtime waveform TheVIHis internally clampedat6V about.Itis possibleto connectthispintoan higher voltageviaan external resistor calculated tonot
exceed10mAatthe inputpin.
note1:The Nominal Currentisthe currentatTc =85oC forbattery voltageof 13V whichproducesa voltage dropof0.5V
note2: IOL(off) =(VCC -VOL)/ROL
note3:tpovltpol: ISO definition
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)
VN770
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