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VN2406D-VN2406D.-VN2406L-VN2410LS
Enhancement-Mode MOSFET Transistors
VISHAY
TN241OL, VN2406DIL, VN2410L/LS
Vishay Siliconix
N-Channel 240-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(On) Max (Q) VGS(th) (V) ID (A)
TN2410L 10@VGS=4.5V 0.5 to 1.8 0.18
VN2406D 6@VGS=1OV 0.8to2 1.12
VN2406L 240 6 ©Vss-- 10V 0.8 to2 0.18
VN2410L 10@VGs=10V 0.8t02 0.18
VN2410LS 10@VGS=1OV 0.8to2 0.19
FEATURES BENEFITS APPLICATIONS
. Low On-Resistance: 3.5 Q q Low Offset Voltage 0 High-Voltage Drivers: Relays, Solenoids, Lamps,
. Secondary Breakdown Free: 260 V O Full-Voltage Operation Hammers, Displays, Transistors, etc.
. Low Power/Voltage Driven . Easily Driven VWthout Buffer q Telephone Mute Switches, Ringer Circuits
. Low Input and Output Leakage q Low Error Voltage q Power Supply, Converters
. Excellent Thermal Stability q No High-Temperature "Run-Away" q Motor Control
'Device Marking
Front Mew
TO-226AA TN241OL TO-92S
(TO-92) "S" TN TO-ZZOAB (Copper Lead Frame)
2410L (Tab Drain) . .
s xxyy 'Device Marking 'Device Marking
T.. Front View s Front View
G VN2406L LU VN2406D VN2410LS
"S" VN " "
2406L Ci VN2406D G s VN
© 241OLS
D xxyy
"S" xxyy D xxyy
ca . ' .
Top View VN2410L L3J "S" = Siliconix Logo s = Siliconix Logo
"S" VN xxyy = Date Code . xxyy = Date Code
TN2410L 2410L Top View Top View
VN2406L
VN2410L xxyy VN2406D VN2410LS
"S" = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol TN2410L VN2406Db VN2406L VN241OL VN2410LS Unit
Drain-Source Voltage Vos 240 240 240 240 240
Gate-Source Voltage VGS :1: 20 cl: 20 cl: 20 l 20 l 20 V
Continuous Drain Current TA-- 25°C I 0.18 1.12 0.18 0.18 0.19
(T: = 150°C) TA-- 100°C D 0.11 0.7 0.11 0.11 0.12 A
Pulsed Drain Currenta IDM 1 3 1.7 1.7 2
. . . TA-- 25°C 0.8 20 0.8 0.8 0.9
Power Dissipation TA-- 100°C PD 0.32 a 0.32 0.32 0.4 W
Thermal Resistance, Junction-to-Ambient RthJA 156 625C 156 156 139 °CIW
"i'2rti,nleg'td'tr2,nliange Tu, Tsta -55 to 150 I
a. Pulse width limited by maximumjunction temperature.
b. Reference case for all temperature testing.
C. Maximumjunction-to-case
DocumentNumber: 70204
S-04279-Rev. F, 16-Jul-01
www.vishay.com
TN2410L, VN2406D/L, VN2410LILS VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
TN2410L VN2406D/L VN241OL/LS
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)Dss VGS = 0 V, b = 100 “A 260 240 240 240
Gate-Threshold Voltage Vegan) Vros = VGs, ID = 1 mA 1.4 0.5 1.8 0.8 2 0.8 2 V
VDs=0V,Vss=ce15V i100 i100
Gate-Body Leakage less I Tu = 125°C i500 i500 nA
VDs=0V,VGs=ce201/ 110
VDS= 192 V,VGs= 0v 0.01 1
. I T J = 125°C 1 100
Zero Gate Voltage Drain Current IDss VDS = 120 V, VGS = O V 10 10 11A
l Tu = 125°C 500 500
VDS =10 v. VGS = 4.5 v 0.8 0.25
On-State Drain Currentb loam) A
1/Ds=15V,VGs=10V 1.5 1 1
VGS=2.5V, |D=0.1 A 7.5 10 10
v63: 3.5 V, ID: 0.05A 4.5 15
. . VGs=4.5N/,lD=0.2A 4 IO
Drain-Source On-Resistanceb rDs(on) I TJ = 125°C 7.5 20 Q
sz=10v,ID=o.5A 3.5 6 10
l Tu = 125°C 6.5 14.8 24.7
VDs=10V,lD=0.2A 500 100
Forward Transconductanceb gfs mS
Vros = 10 V, ID = 0.5 A 530 300 300
Input Capacitance Ciss 115 135 135 135
Output Capacitance Coss VDS = ie “XS: = 0 V 30 50 50 50 pF
Reverse Transfer Capacitance Crss 5 2O 20 20
Switchingc
tos 5 35
Turn-On Time td(0n) 3 8 8
tr VDD=60 V,RL=150Q 2 8 8
ID a 0.4 A, VGEN = 10 v ns
tOFF Rs = 25 Q 26 60
Turn-Ott Time tam) 20 23 23
tr 6 34 34
a. For DESIGN AID ONLY, not subject to production testing. VNDB24
b. Pulse test: PW s300 us duty cycle 5 2%.
c. Switching time is essentially independent of operating temperature.
www.vishay.com Document Number: 70204
11-2 S-04279-Rev. F, 16-Jul-01
VISHAY
TN2410L, VN2406DIL, VN2410L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
ID— Drain Current (A)
ID — Drain Current (A)
rDS(on) — Drain—Source On—Resistance ( (2)
Ohmic Region Characteristics
VGS =10V
/ 4.0V
2 2.5V
1 2 3 4 5
N/os - Drain-to-Source Voltage (V)
Transfer Characteristics
VDS=15V
T., ---550C / 25°C
1 2 3 4 5
VGS - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
VGS=10V
0.1 0.2 0.3 0.4 0.5 0.6
In - Drain Current(A)
ID — Drain Current (mA)
rDs(on) — On—Resistance (Q )
z: 2.00
S' 1.75
o.&’ 1.50
82 1.25
DI 1.00
g 0.75
Output Characteristics for Low Gate Drive
VGS = 3 V 2.6 v
w,-"''
o,,,,/'''''''" 2.0 v
o 0.4 0.8 1.2 1.5 2.0
I/os - Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0 4 8 12 16 20
Vss - Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
VGS=10V l
ID = 0.5 A
sy' 0.1 A
-50 -10 30 70 110 150
T: - Junction Temperature (°C)
DocumentNumber: 70204
S-04279-Reu. F, 16-Jul-01
www.vishay.com
TN2410L, VN2406D/L, VN2410LILS
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
ID— Drain Current (mA)
Threshold Region
Vros=5V
To-- 150°C
0.3 0.7 1.1 1.5
Ves - Gate-to-Source Voltage (V)
Gate Charge
15.0 I
ID = 0.5 A
A 12.5
g 10.0
g N/os = 120 V
lis' 5.0 192 V
0 400 800 1200 1600 2000
Q9 - Total Gate Charge (pC)
Drive Resistance Effects on Switching
t— Switching Tlme (ns)
VDD=60V
RL=150§2
ID=0.4A
2 5 IO 20 50 100
Ra -Gate Resistance (Q)
t— Switching TIrne (ns) C — Capacitance (pF)
ls — Source Current (A)
Capacitance
Vss = 0 v
f= 1 MHz
Crss "ss..
O 10 20 30 40 50
Vos - Drain-to-Source Voltage (V)
Load Condition Effects on Switching
Vos=60V
RG=25Q
0.01 0.1 1
ID - Drain Current (A)
Source-Drain Diode Forward Voltage
0 0.5 1.0 1.5 2.0 2.5
I/so - Source-Drain Voltage (V)
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DocumentNumber: 70204
S-04279-Rev. F, 16-Jul-01
VISHAY TN2410L, VN2406DIL, VN2410L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
'tic';.'--.'. 0.1
0.1 1 10 100
I1 - Square Wave Pulse Duration (sec)
Notes:
-5 t1 F--
- ta - t
1. Duty Cycle, D = T;
2. Per Unit Base = mm = 156°C/W
3. TJM - TA = PDMZmJA“)
1K 10K
DocumentNumber: 70204
S-04279-Reu. F, 16-Jul-01
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