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VN16B
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
VN16BISO HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATASeptember 1994
BLOCK DIAGRAM (*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
(#) The maximum continuous output current is the current at Tc = 85 o C for a battery voltage of 13 V which does not activate
self protection MAXIMUM CONTINUOUS OUTPUT
CURRENT (#): 20 A @ Tc= 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION
DESCRIPTION The VN16B is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The open drain diagnostic output indicates: open
load in off state and in on state, output shorted to
VCC and overtemperature. Fast demagnetization
of inductive loads is archieved by negative (-18V)
load voltage at turn-off.
1/11
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
VN16B2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 o C unless otherwise specified)
POWER
SWITCHING
LOGIC INPUT
VN16B3/11
ELECTRICAL CHARACTERISTICS (continued)PROTECTION AND DIAGNOSTICS (continued)
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) See Switchig Time Waveforms
(•) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
note 1: The Nominal Current is the current at Tc = 85 o C for battery voltage of 13V which produces a voltage drop of 0.5 V
note 2: IOL(off) = (VCC -VOL)/ROL (see figure)
note 3: tpovl tpol: ISO definition (see figure)
Note 2 Relevant Figure Note 3 Relevant Figure
VN16B4/11
FUNCTIONAL DESCRIPTION The device has a diagnostic output which
indicates open load in on-state, open load in
off-state, over temperature conditions and
stuck-on to VCC.
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140 o C. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor being located inside the Power
MOS area. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (Vdemag) of -18V. This
function allows to greatly reduces the power
dissipation according to the formula:
Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f
where f = switching frequency and
Vdemag = demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed VCC, Vdemag and f
according to the above formula. In this device if
the GND pin is disconnected, with VCC not
exceeding 16V, it will switch off.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows: If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND). The undervoltage shutdown level is increa-
sed by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 3), which becomes
the common signal GND for the whole control
board avoiding shift of Vih, Vil and Vstat. This
solution allows the use of a standard diode.
Switching Time Waveforms
VN16B5/11
TRUTH TABLE(#) With an additional external resistor
Figure 1: Waveforms
VN16B6/11
