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VN10KE-VN10KM
N-Channel Enhancement-Mode MOS Transistors
Siliconix
VN0610L, VN10KE/KM, VN2222L
N -Channel Enhancement-Mode MOS Transistors
Zener Gate Protected
Product Summary
Part Numkst, V(anss’ Mini}? VVF . rnswn) MWF (R) Vqsuhi M lb' (A) V V vvq
VN0610L 5 © Vos = 10 V 0.8 to 2.5 0.27
VNIOKE 60 5 tii) Vos Fa' 10 V 0.8 to 2.5 0.17
VN10KM . 5 © VGS = 10 V 0.8 to 2.5 0.31
VN2222L 7.5 © Vos = 10 V 0.6 to 2.5 0.23
Features Benefits Applications
I Zener Diode Input Protected q Extra ESD Protection o. Driversr,lelays, Splenoi%umps, Hammers,
a Low on-Resistance: 3 n o' Low Offset Voltage Displays, Memories, Transistors, em
. Ultralow Threshold: 1.2 V o Low-Voltage Operition 0 Battery Operated Systems
. Low Input Capacitance: 38 pF 0 High-Speed,Easi1y Driven . Solid-State, Relays
. Low Input and Output Leakage q Low Error Voltage . Inductive Load Drivers
m-zomc
(1°52) - T0-237
(m: Drain)
VN06 1 0L
VN2222L
Tbp View
VNIOKE
pr View
VNlOKM
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
7 _ 77Pa1'gme1gxf _ _ _ _ _ ic' I Symbol VN0610L VNIOKE VNIOKM VNZZZZL Unit
Drain-Source voltage VDs 60 60 60 60 V
Gate-Source Voltage vas 15/-0.3 15/-0.3 15/- 0.3 15/-0.3
7 7 Th-- 25°C 027 0.17 0.31 0.23
Continuous Drain Current cr, - ISO'C) ID
TA-- 100°C 0.17 0.11 0.20 0.14 A
Pulsed Drain Current' IDM 1 1 1 1
TA: 25''C 0.8 0.3 1 0.8
Powcr Dissipation PD W
TA= 100''C 0.32 0.12 0.4 0.32
Maximum ntnctioreto-Ambient Rasa 156 400 125 156 'OW
Operating Junction and Storage 'Temperature Range 'TY, Tsts -55 to 150 _ "C
a. Pub, width limited by maximumjunclion temperature.
IN38480--Rev, B (08/16/94)
LowPawn- MOS IE]
. . a "., ___ ., .10 n ,.-é~....--'- Eu",, i_ue 1.,"-
Specifications" - _
Limits
VN0610L
VNIOKE
VNIOKM VN2222L
_ Parameter Symbol Test Conditions '1be Min Max Min Max Unit
Static _, _ '4
Drain-Source Breakdown Voltage V(BR)DSS Vas = 0 y, In " 100 [AA 120 60 60
Gate-Threshold Voltage Krew VDS = Hrs, ID I. 1 mA 1.2 0.8 2.5 0.6 2.5
Gato-Body umgc loss vDs - o V, Vos " IS v 1 100 100 nA
- ‘ VDs-48V,VGs-0V 10 10
Zero Gate Volta e Drain Current I
g _ _ Ts T Ty = 125°C 500 500 WA
On-Smtc Drain Current? _ _ _ ' ID(on) VDS - 10 V, Vos " 10V t 0.75 0.75 A
Vas = 5 V, In a 0.2 A 4 7.5 7.5
Drain-Source OtrResistancef rDS(on) Vos = 10 V, ID = 0.5 A 3 5 7.5 n
Ty --- 125°C 5.6 9 13.5
Forward 'Iranstxmductanetf gty VD: = 10 V, ha a 0.5 A 300 100 100
Common Source Output Conductancc° gas VDs = 7.5 V, In = 0.05 A 0.2
Drrtaaii'i' A , " _ I
Input Capacitance
Output Capacitance , P . Cass VDS " 25 v, viss =riir, r = 11411:, 16 25 25 pF
Reverse Transfer Captcitaiice 7 = I V
Switchiiisi , . 1. ", "
'mm-On Thne _ ION VDD = 15 V, RLS" 23 Q 7 10 10 ns
'mm-orf'nmc " ton. ID . 0.6 A, VGEN = 10 V, Ro " 25 n 9 IO 10
Notes _ . W - .
a. TA = 25''C unless btherwise noted. - T - VNDP06
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse lest: PW s 300 " duty cycle s2%.
d. Switching time is esscntially independent ofoperating temperalgre.
_ 4n _ .' Fe, t a' , . T ' . . .1 5 _ i..'..'' . 1;, . i?! 1
11-56 ' . . _ Pr384lp-Rev. B (08/26/94)
Siliconix
Typical Characteristics (25°C Unless Otherwise Noted) _
ID — Drain Current (A) In -— Drain Current (mA)
mg.) — Drain-Souroc On-Resismncc ( 9)
Ty = 25'C
Character,istics
VGS = 2.0 V
10 1.4V
Vos - Drain-to-Source Voltage (V)
Transfer Characteristlcs
VDS = 15 V / /
Ty = -55'C
77‘} m
(l 125'C
0 1 2 3 4 5
Vos - Gate-Source Voltage (V)
5 On-Resistance vs. Drain Current
V = 10V /
3 qs ",.C.LCe----'"""
o,...----'-"""''
0 0.2 0.4 0.6 0.8 1.0
In - Drain Currcm(A)
P.38480-Rev, B (03/26/94)
1;, — Drain Current (A)
o 0.4 th8 1.2 _ 1.6 2.0
ma.) - On-Resislance (Q)
(Nommlizod)
Drain—Source On-Ruistam
II>$(ou) "
VN0610L, VNlOKE/KM, VN2222L
Output Chpracteristiq tof Low Gate Drive
T,=2sl'c / 6V
-1le A10V
, j,',',,,?,,,,,---'!"''""'"'"
yd,;'''" '-""" '4sr
z/ii''''''''" T'
o 1 c 2 3 4
Vns - Drain-to-Source Voltage (V)
JhMtesistance vs. Gate-to-Source Voltage
Ts I 25'C
o I 4 8 12 16
I/as--. ditesurie Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
VGS " 10V
ID=0.5A //
",,'''"
- 50 -. 10 30 70 1 10
T; - Junction 7brnperature (T)
LowPawer MOS E
VN0610L, VNlOKE/KM, VN2222L Siliconix
Typical Characteristics (25°C Unless Otherwise Noted) (Cont'd)
Thrgshold Region
i - T: - 150'C
I 0.1 25'C
--55'C
0 0.25 0.5 _ 0.75 1.0 1.25 1.5 1.75
vas - Gate-trrsoutce Voltage (V)
Gate Charge
15.0 I
E: ID = 0.5 A /
0 12.5 f
JI 30V /
3 10 0
ll . Ivy"'
tl 5.0 7
1 sti''" 48 v
0 100 200 300 400 500 600
Nonnulimd Effecfivc Transient
'I‘hcrmal Impedance
th - Tbtal Gate Charge (pC)
C“? Capacitamc (pF)
I - Switching'fime (ns)
7- 100
Capacitance
Vgs=0V
[EIMHZ
0 10 20 30 40 50
Vros - Drain-to-Sourcc Voltage (V)
LoadrConditlon Etrects on Switching
VDD=15V
RL=250
Vas=OIOIOV
- 0.1 0.5 1.0
In - Drain Current (A)
Normalized Etrective Transient Thermal Impedance, J unction-to-Amblent (TO~226AA)
Single Pulse
- u. l---
1-Dutmdab- -h
1hrUnitBaie . RM-156°CM
3. Tm - TA " rinezasstt)
100 IK 10K
tt - Square Wave Pulse Duration (sec)
F38480-Rev. B (08/26N4)
www.ic-phoenix.com
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