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VN0808L
Enhancement-Mode MOSFET Transistors
VISHAY
VN0808LILS, VQ1006P
Vishay Siliconix
N-Channel 80- and 90-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDSion) Max (Q) Vegan) (V) ID (A)
VN0808L 4 @ VGS = 10 v th8to 2 0.3
VN0808LS 80 4 @ VGS = 10 v 0.8 to 2 0.33
VQ1006P 90 4 @ VGS =10 v 0.8 to 2.5 0.4
FEATURES BENEFITS APPLICATIONS
q Low On-Resistance: 3.6 C2 q Low Offset Voltage q Direct Logic-Level Interface: TTL/CMOS
0 Low Threshold: 1.6 V o Low-Voltage Operation q Drivers: Relays, Solenoids, Lamps, Hammers,
q Low Input Capacitance: 35 pF q Easily Driven VNflthout Buffer Displays, Memories, Transistors, etc.
q Fast Switching Speed: 6 ns q High-Speed Circuits q Battery Operated Systems
q Low Input and Output Leakage q Low ErrorVoltage q Solid-State Relays
T0-226AA TO-92S Dual-ln-Line
(TO-92) U
s D, E2151. $124 D4
NC E E NC
D G2 E E G.
Top View N S2 E El Ss N
Top View VN0808LS E issff
D2 7 8 Da
VN0808L Front View: |: El
Front View: VN0808LS Top View
VN0808L " n
S VN Sidebraze: VQ1006P
"S" VN 0808LS
0808L xxyy Top View:
"S" = Siliconix Logo VtM006P
f= Factory Code VQ1006P
ll = Lot Traceability "S"6bxyy
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
VQ1006P
Parameter Symbol VN0808L VN0808LS Single Total Quad Unit
Drain-Source Voltage I/tos 80 80 90
Gate-Source Voltage VGS i 30 i 30 i 20 V
Continuous Drain Current TA-- 2500 I 0.3 th33 0.4
(T: = 150°C) TA=100°C D 0.19 0.21 0.23 A
Pulsed Drain Currenta 'DM 1.9 1.9 2
TA-- 25°C 0.3 0.9 1.3 2
Power Dissipation PD W
TA-- 100°C 0.32 0.4 0.52 0.8
Thermal Resistance, Junction-to-Ambient RthJA 156 139 96 62.5 "CAN
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 "C
a. Pulse width limited by maximumjunction temperature.
DocumentNumber: 70214
S-04279-Rev.D, 16-Jul-01
www.vishaycom
VN0808LILS, VQ1006P
Vishay Siliconix
VISHAY
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
VN0808L/LS VQ1006P
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = O V, ID = 10 11A 125 80 90
Gate-Threshold Voltage Vegan) 1/ros = N/ss, ID = 1 mA 1.6 0.8 2 0.8 2.5
VDS=0V,VGs=i15V i100 i100
Gate-Bod Leaka e less nA
y g l TJ= 125°C 1500
VDs=80V,Vcs=0V 10
l T J = 125°C 500
Zero Gate Volta e Drain Current I
g DSS N/os = 72 v, VGS = o v 1 [IA
l To = 125°C 500
On-State Drain Currentb low”) Vros = 10 V, VGS = 10 V 1.8 1.5 1.5 A
V65: 5V, ko-- 0.3A 3.8 5
Drain-Source On-Resistanceb rDSmm VGS = 10 V, ID = 1 A 3.6 4 4.5 Q
TJ =125°C 6.7 8 8.6
Forward Transconductancdo gfs VDs = 10 V, ID = 0.5 A 350 170 170
Common Source Output Conductanceb gos Vros = 10 V, ID = 0.1 A 0.23
Dynamic
Input Capacitance Ciss 35 50 60
Output Capacitance Coss VDS = 25 V, VGS = 0 V, f= 1 MHz 15 4O 50 pF
Reverse Transfer Capacitance Crss 2 1O 10
Switching''
Turn-On Tlme tON VDD = 25 V, RL = 23 Q 6 10 10
|D21A,VGEN=10V ns
Turn-Off/e [OFF Rs = 25 Q 8 IO 10
a. For DESIGN AID ONLY, not subject to production testing. VNDQ09
b. Pulse test: PW 5300 us duty cycle 52%.
C. Switching time is essentially independent of operating temperature,
www.vishay.com
Document Number: 70214
S-04279-Rev.D, 16-Jul-01
VISHAY
VN0808LILS, VQ1006P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
1.0 V'GS = 10 v ,,,w''' wt'',''
0.8 m,,,,,-.''''"'"
A /f, ',C,'V'-''' 5V
ii 0.6 / C,,,:,,",,',',' -
g t,(i,f:i':i'i:',',',,',',',,,". 4 V
o s4t' ’7
.E s,,,.-''"''''''"
ch 0.4 bf, l
l, 3 V
0 2 ttar----
0 1.0 2.0 3.0 4.0 5.0
I/ras - Drain-to-Source Voltage (V)
Transfer Characteristics
0.5 I I
T: = _5500 125°C
0 I 25°C
_l, Vios = 15 v
0 2 4 6 8 10
Vss - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
QI'. /
8 Vcs = 10 v
i, 4 I
0 0.5 1.0 1.5 2.0 2.5
ID - Drain Current (A)
rDs(on) — On-Resistance ( 0 ID — Drain Current (mA)
rDs(on) — Drain—Source On—Resistance ( Q )
(Normalized)
Output Characteristics for Low Gate Drive
VGS=3V
0 0.4 0.8 ld? 1.6 2.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0 4 8 12 16 20
Vas - Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
Vss=10V /
ow''''''"
-50 -1 0 30 70 110 150
To - Junction Temperature CC)
Document Number: 70214
S-04279-Rev.D, 16-Jul-01
www.vishay.com
VN0808L/LS, VQ1006P VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Threshold Region Capacitance
VGS = O V
l f = 1 MHz
2." sc.?,
g g 75
CI 8 50 Ciss
I I 'm-....-,
AD Q C
25 'rd::',
0 '"""""ez,
0.5 1.0 1.5 2.0 0 10 20 30 4O 50
Vss - Gate-to-Source Voltage (V) Vos - Drain-to-Source Voltage (V)
Gate Charge Load Condition Effects on Switching
15.0 I 100
VDD = 25 v
ID=1.0A RL=23§2
12.5 VGS=0t010V
2 ID = 1.0 A
Il'? 10.0 / I'zl
j', _,,e,','' g
8 Vos = 45 V "e''.' I:
's 7 5 l CD 10
a; ws',','',''; F,
S) we'',,',', 72 V ii
2 / U)
o t,',v''''''" J.
I se',',',',',')
f' 2.5 /
0 100 200 300 400 500
O5] - Total Gate Charge (pC) ID - Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
I- m Notes:
ID 8 _
2 o. ,
ifj g PDM
8 E -l " _
M {E - t2 - t
g 1. Duty Cycle, D = i,
fl -] 0.01 2. Per Unit Base = RWA = 156°CNV
3. TJM - TA = PDMZthAm
Single Pulse
0.1 1 10 100 1 K 10 K
11 - Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70214
11 -4 S-04279-Rev.D, 16-Jul-01
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