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VN0610L-VN2222L
Enhancement-Mode MOSFET Transistors
VISHAY
VN0610L, VN1OKLS, VN2222L
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs with Zener Gate
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDSton) Max (C2) VSSith) (V) ID (A)
VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27
VN1OKLS 60 5 @Vss=10V 0.8 to 2.5 0.31
VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23
FEATURES BENEFITS APPLICATIONS
. Zener Diode Input Protected 0 Extra ESD Protection 0 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
. Low On-Resistance: 3 Q q Low Offset Voltage Memories, Transistors, etc.
. Ultralow Threshold: 1.2 v o Low-Voltage Operation q Battery Operated Systems
. Low Input Capacitance: 38 pF q High-Speed, Easily Driven q Solid-State Relays
0 Low Input and Output Leakage q Low ErrorVoltage q Inductive Load Drivers
T0-226AA
(TO-92)
Top 1Aew
VN0610L
VN2222L
Device Marking
Front bftne
VN061 0L
"S" VN
VN2222L
"S'' VN
"S" = Siliconix Logo
xxyy = Date Code
TO-92S
Device Marking
s Front Mew
VN1OKLS
"S" VN
G 10KLS
D "S" = Siliconix Logo
xxyy = Date Code
Top Ifew
VN10KLS
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
VN2222L
Parameter Symbol VN0610L VN1OKLS Unit
Drain-Source Voltage V08 60 60
Gate-Source Voltage Ves 15/-0.3 15/Ah3 V
TA-- 25°C 0.27 0.31
Continuous Drain Current (TJ = 150°C) TA-- 100°C ID 0.17 0.20 A
Pulsed Drain Currenta IBM 1 1.0
TA-- 25''C 0.8 0.9
Power Dissipation TA-- 100°C PD 0.32 0.4 W
Thermal Resistance, Junction-to-Ambient RthJA 156 139 "CAN
Operating Junction and Storage Temperature Range Ts Tstg -55 to 150 I
a. Pulse width limited by maximumjunction temperature.
DocumentNumber: 70213
S-04279-Rev. F, 16-Jul-01
www.vishaycom
VN0610L, VN10KLS, VN2222L
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
VN0610L
VN1OKLS VN2222L
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS N/ss = 0 V, ID = 100 WA 120 60 60
Gate-Threshold Voltage Vegan) VDs = Vss, ID = 1 mA 1.2 0.8 2.5 0.6 2.5
Gate-Body Leakage less Vos = 0 V, VGS = 15 V 1 100 100 nA
VDS=48V,VGS=0V 10 10
Zero Gate Volta e Drain Current I
g DSS T J = 125°C 500 500 "A
On-State Drain Currentb loam) VDS = 10 V, Vss = 10 V 1 0 75 0.75 A
VGS = 5 V, ID = 0.2 A 4 7.5 7.5
Drain-Source On-Resistanceb rDs(on) VGS = 10 V, ID = 0.5 A 3 5 7.5 Q
TJ =125°C 5.6 9 13.5
Forward Transconductancd' gts VDs = 10 V, ID = 0.5 A 300 100 100
Common Source Output Conductanceb gos Vos = 7.5 V, ID = 0.05 A 0.2
Dynamic
Input Capacitance Ciss 38 60 60
Output Capacitance Coss Vos = 25 V, VGS = 0 V, f= 1 MHz 16 25 25 pF
Reverse Transfer Capacitance Crss 2 5 5
Switchingc
Turn-On Time tON VDD = 15 V, RL = 23 Q 7 10 10
ID a O.6A,VGEN=10V ns
Turn-OffTIme tOFF RG = 25 g 9 10 10
a. For DESIGN AID ONLY, not subject to production testing. VNDP06
b. Pulse test: PW s300 us duty cycle s2%.
c. Switching time is essentially independent of operating temperature.
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DocumentNumber: 70213
S-04279-Rev. F, 16-Jul-01
VISHAY
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
I/ss = 2.0 V
ch 1.6 V
An 1.5 v
0 0.4 0.8 1.2 1.6 2.0
I/ras - Drain-to-Source Voltage (V)
Transfer Characteristics
Vos = 15 v
T J = -55''C /
Ci. y' I 25°C
E 0.3 y I
g /y 125°C
Es 0.2 ,
0 1 2 3 4 5
Vss - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
.9 VGS = 10 V s.,,,.--''"''"
ii' 3 _....,.----""""
s-rr"'"""
8 m.....,...-----'"""'"
0 0.2 0.4 0.6 0.8 1.0
ID - Drain Current (A)
rDS(on) — On-Resistance ( Q ) ID — Drain Current (A)
rosmn) — Drain-Source On-Resistance ( S2 )
(Normalized)
Output Characteristics for Low Gate Drive
/" 6 v
Vas = "j/f, 'l",,,,,,,--'"'''''"
, Cw:',''.',',',
t,(,(,,id''''''''" 4 v
/v/:,' 3 v
0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Vss - Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
VGS=10V
ID = 0.5A
'jest'''';, A
r.,,,,--'''''''''"
-50 -1 0 3O 70
110 150
T J - Junction Temperature CC)
DocumentNumber: 70213
S-04279-Reu. F, 16-Jul-01
www.vishaycom
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Threshold Region Capacitance
10 100 I
l/GS = 0 v
f= 1 MHz
li. 1 Fr"
ifi T J = 150°C 2; 60
100°C 0
IE I _ , 40 ' Ciss
CI "'''s...
I 0.1 25°C 'i N, C M-....-,
AD o L oss
20 'ss.
0.01 0
o 0.25 0.5 0.75 1.0 1.25 1.5 1.75 0 10 20 30 40 50
VGS - Gate-to-Source Voltage (V) N/os - Drain-to-Source Voltage (V)
Gate Charge Load Condition Effects on Switching
15.0 1
ID=05A VDD=15V
RL = 25 Q
A 12.5 VGs=0to10V
ty V - 30 V f
(u DS -
g 10 0 a
g . r. 5
g " a,
8 l sd'' E
6?) 7.5 (i''
a 5.0 (l)
, f" 48 v J.
0) ,j,r'ro'
f 2.5 I
0 100 200 300 400 500 600 0.1 0.5 1.0
09 - Total Gate Charge (pC) ID - Drain Current(A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (T0-226AA)
Duty Cycle = 0.5
TV 0 es:
Jd 8 T
"G E 0.1 PDM
T7 E -5 " _
2 ff - t2 -
E 1. Duty Cycle, D = T1
o - 0.01 2. Per Unit Base = Rth0A = 156°CNV
3. TJM - TA = PDMirtruA(t)
Single Pulse
0.1 1 10 100 1 K 10 K
tl - Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70213
11-4 S-04279-Rev. F, 16-Jul-01
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