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VN0605T-VN0610LL-VN10LLS-VN2222LL
Enhancement-Mode MOSFET Transistors
VISHAY
VN1OLLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDSton) Max (Q) Vesuh) (V) ID Min (A)
VN1OLLS 5@VGS=10V 08102.5 0.32
VN0605T 5@VGS=10V 0.8to 3.0 0.18
VN0610LL 60 5 @ VGS = 10 v 0.8 to 2.5 0.28
VN2222LL 5 @ Vas = 10 v 0.6 to 2.5 0.23
FEATURES BENEFITS APPLICATIONS
. Low On-Resistance: 2.5 Q . Low Offset Voltage q Direct Logic-Level Interface: TTL/CMOS
. Low Threshold: <2.1 V o Low-Voltage Operation q Solid State Relays
. Low Input Capacitance: 22 pF q Easily Driven VWthout Buffering q Drivers: Relays, Solenoids, Lamps, Hammers,
. Fast Switching Speed: 7 ns q High-Speed Circuits Displays, Memories, Transistors, etc.
0 Low Input and Output 0 Low Error Voltage q Battery Operated Systems
Leakage
T0-226AA Front View T0-928 TO-236
(TO-92) (SOT-23)
VN0610LL Front View VN0605T
S "S" VNO VN1OLLS
xxyy G G l: V2wll
G "S'' VN I
10LLS E D
D VN2222LL D WY s E I I | I
"S" VN2 Top View "S'' = Siliconix Logo V2 = 2r11Lugtisi',r Code
Top Mew 233» VN10LLS xxyy = Date Code FC’VfTe" C°d§1rty
VN0610LL = 0 racea ll
VN2222LL Top wew
VN0605T
"S" = Siliconix Logo
xxyy= Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol VN1OLLS VN0605T VN0610LL VN2222LL Unit
Drain-Source Voltage VDS 60 60 60 60
Gate-Source 1/oltage-Non-RepetitivtP VGSM i 30 i 30 ct: 30 i 30 V
Gate-Source Voltage-Continuous VGS cl: 20 ck 20 l 20 cl: 20
Continuous Drain Current TA-- 25''C I 0.32 0.18 0.28 0.23
(To = 150°C) TA-- 100°C D 0.2 0.11 0.17 0.14 A
Pulsed Drain Currenta IBM 1.4 0.72 1.3 1.0
TA-- 25°C 0.9 0.36 0.8 0.8
P Di . ti P W
ower lssma Ion TA-- 100°C D 0.4 0.14 0.32 0.32
Thermal Resistance, Junction-to-Ambient RthJA 139 350 156 156 'C/W
Operating Junction and - 0
Storage Temperature Range To, Tstg 55 to 150 C
a. Pulse width limited by maximumjunction temperature.
b. tp s 50 us.
DocumentNumber: 70212
S-04279-Rev. G, 16-Jul-01
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VN10LLS, VN0605T, VN0610LL, VN2222LL
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
VN10LLS
VN0610LL VN0605T VN2222LL
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Drain-Source V BR DSS VGS = 0 V, ID = 100 11A 70 60 60
Breakdown Voltage ( ) VGS = 0 V, ID = 10 “A 70 60 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 2.1 0.8 2.5 0.8 3.0 0.6 2.5
VDs=0V,VGs=ce20V i100 i100
Gate-Body Leakage less l T J=125°C l 500 nA
VDs=0V,VGs=ce30V i100
1/Ds--50V,VGs=0V 10 1.0
Per? Gate-Voltage loss I To-- 125 C 500 500 PA
Drain Current VDS = 48 V, VGS = 0 V 10
l To-- 12500 500
On-State Drain Currentb |D(on) Vos = 10 V, VGS = 10 V 1000 750 500 750 mA
VGS = 4.5 v, b = 50 mA 4.5 7.5
Drain-Source r VGS = 5 V, ID = 0.2 A 4.5 7.5 7.5 Q
OrrResistancep DS(on) VGS = 10 v, ID = 0.5 A 2.4 5 5 7.5
To-- 125°C 4.4 9 10 13.5
Forward I/os = 10 V, ID = 0.5 A 230 100 100 ms
Transconductancds 9ts VDS = 10 V, ID = 0.2 A 180 80
Common Source - -
Output Conductanceb gos VDS - 5 V, ID - 50 mA 500 ws
Dynamic
Input Capacitance Ciss 22 60 60 60
Output Capacitance Coss VDs =25 V, VGS = 0 V 11 25 25 25 F
R T t f= 1 MHz p
everse rans er
Capacitance Crss 2 5 5 5
Switching"
Turn-On Time tos VDD = 15 V, RL = 23 Q, ID _ 0.6 A 7 IO 10
Turn-OffTIme tOFF VGEN = 10 V, Rs = 25 C2 7 IO 10
Turn-On Time toro VDD = 30 v. RL = 150 2 ID a 0.2 A 7 20
Turn-OffTIme tOFF VGEN = 10 V, Rs = 25 Q 11 20
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. VNBF06
b. Pulse test: PW 5300 us duty cycle s3%.
C. Switching time is essentially independent of operating temperature,
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DocumentNumber: 70212
S-04279-Rev. G, 16-Jul-01
VISHAY
VN1OLLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
ID — Drain Current (A)
I’Ds(0n) — On-Resistance ( Q
Ves — Gate-to-Source Voltage (V)
Output Characteristics
VGS=10,9,8,7V
0.0 i 2,1V
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
To = 25°C
I rDs @ 5 V = V68
4 w,,,,,.--''''"
----'"'
3 ros@10V=Vss -
0.0 0.2 0.4 0.6 0.8 1.0
ID - Drain Current(A)
Gate Charge
20 I I
Vos = 30 v
12 t,,,/'''"
8 w,,,''''
4 o,,,,'''''
0 400 800 1200 1600 2000 2400
Qg - Total Gate Charge (pC)
C — Capacitance (pF) ID — Drain Current (A)
rDS(on) - On—Resistance ( 9)
(Normalized)
Transfer Characteristics
TJ = -551
0.6 25°C
0 1 2 3 4 5 6
Vss - Gate-to-Source Voltage (V)
Capacitance
5 10 1 5 20 25 3O
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
,,,,,,,,pp''''',,',
VGs=10V,
[email protected] / -
1.0 "ee'''''
ssss'" VGS = 5 v, rDs © 0.05 A
rss'"'
-55 -30 -5 20 45 70 95 120 145
To - Junction Temperature (°C)
DocumentNumber: 70212
S-04279-Reu. G, 16-Jul-01
www.vishay.com
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1.000 6
5 " " ID = 50 mA
2 T: =125°c Cl 1
f: 0.100 t; 4 500 mA
6 ii' 3 K
g '3? "ts
ti,::',, 6 ""---m--,..,=
I 0.010 L 2
0.001 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 O 2 4 6 8 10 12 14 16 18 20
VSD - Source-to-Drain Voltage (V) Vas - Gate-to-Source Voltage (V)
Threshold Voltage
b-- 250 0A
Vegan) —Variance (V)
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
t g Notes:
.2 a ,
15 E 0.1 PDM
lt: a t
TD g -5 " _
g fE - te - 1
g 0.01 1. Duty Cycle, D = T
fl 2. Per Unit Base = RtrUA =156°CIW
. 3. Torg - TA = PDMZmJA“)
Single Pulse
0.1 1 10 100 1 K 10 K
h - Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70212
11 -4 S-04279-Rev. G, 16-Jul-01
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