VN05N(011Y) Fast Delivery |IC PHOENIX CO.,LIMITED

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VN05N(011Y)
HIGH SIDE SMART POWER SOLID STATE RELAY
VN05N
HIGH SIDE SMART POWER SOLID STATE RELAY OUTPUT CURRENT (CONTINUOUS): 13A@
Tc=25oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN05Nisa monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input controlis5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
BLOCK DIAGRAM
TYPE VDSS RDS(on) IOUT VCC
VN05N 60V 0.18Ω 13A 26V
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
PENTAWATT
(in-line)
ORDER CODES:
PENTAWATT vertical VN05N
PENTAWATT horizontal VN05N (011Y)
PENTAWATT in-line VN05N (012Y)
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V(BR)DSS Drain-Source Breakdown Voltage 60 V
IOUT Output Current (cont.) 13 A Reverse Output Current -13 A
IIN Input Current ±10 mA
-VCC Reverse Supply Voltage -4 V
ISTAT Status Current ±10 mA
VESD Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V
Ptot Power DissipationatTc≤25o C56 W Junction Operating Temperature -40to 150 oC
Tstg Storage Temperature -55to 150 oC
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
VN05N
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.2 C/W C/W
ELECTRICAL CHARACTERISTICS (VCC=13V; -40≤Tj≤ 125oC unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VCC Supply Voltage 7 26 V
Ron On State Resistance IOUT =6A
IOUT =6A Tj =25oC
0.18 Supply Current Off State Tj≥25oC State
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay TimeOf
Output Current
IOUT=6A Resistive Load
Input Rise Time< 0.1 μsTj =25oC μs Rise TimeOf Output
Current
IOUT=6A Resistive Load
Input Rise Time< 0.1 μsTj =25oC μs
td(off) Turn-off Delay TimeOf
Output Current
IOUT=6A Resistive Load
Input Rise Time< 0.1 μsTj =25oC μs Fall TimeOf Output
Current
IOUT=6A Resistive Load
Input Rise Time< 0.1 μsTj =25oC μs
(di/dt)on Turn-on Current Slope IOUT =6A
IOUT =IOV
A/μs
A/μs
(di/dt)off Turn-off Current Slope IOUT =6A
IOUT =IOV
A/μs
A/μs
LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VIL Input Low Level
Voltage
0.8 V
VIH Input High Level
Voltage
2(*) V
VI(hyst.) Input Hysteresis
Voltage
0.5 V
IIN Input Current VIN=5V 250 500 μA
VICL Input Clamp Voltage IIN =10 mA
IIN =-10 mA
PROTECTIONS AND DIAGNOSTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSTAT(•) Status Voltage Output
Low
ISTAT =1.6 mA 0.4 V Under Voltage Shut
6.5 V
VN05N
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSCL(•) Status Clamp Voltage ISTAT =10 mA
ISTAT =-10 mA
tSC Switch-off Timein
Short Circuit Condition Start-Up
RLOAD <10 mΩ Tc =25oC 1.55ms
IOV Over Current RLOAD <10 mΩ -40≤Tc≤ 125o C60 A
IAV Average Currentin
Short Circuit
RLOAD <10 mΩ Tc =85o C1.4 A
IOL Open Load Current
Level 180 mA
TTSD Thermal Shut-down
Temperature
140 oC Reset Temperature 125 oC
(*) TheVIHis internally clampedat6V about.Itis possibleto connect thispintoan higher voltageviaan external resistor
calculatedtonot exceed10mAatthe input pin.
(•) Status determination> 100μs after the switching edge.
FUNCTIONAL DESCRIPTION
The device hasa diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processedby internal logic. protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOSoffata minimum
junction temperature of 140oC. When the
temperature returnsto about 125oC the switchis
automatically turnedon again. short circuit conditions the protection reacts
with virtuallyno delay, the sensor being locatedin
the regionof the die where the heatis generated.
PROTECTING THE DEVICE AGAINST REVER- BATTERY
The simplest wayto protect the device againsta
continuous reverse battery voltage (-26V)isto
inserta Schottky diode between pin1 (GND) and
ground,as shownin the typical application circuit
(fig.3).
The consequencesof the voltage drop across
this diode areas follows:If the inputis pulledto power GND,a negative
voltageof -VFis seen by the device. (VIL,VIH
thresholds and VSTAT are increasedby VF with
respectto power GND). The undervoltage shutdown levelis increased VF. thereis no need for the control unitto handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potentialof the control unitto node [1]
(see application circuitin fig. 4), which becomes
the common signal GND for the whole control
board. this way no shiftof VIH,VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use ofa
standard diode, witha breakdown voltage ableto
handle any ISO normalized negative pulses that
occoursin the automotive environment.
VN05N
TRUTH TABLE
INPUT OUTPUT DIAGNOSTIC
Normal Operation L
Open Circuit (No Load) H H L
Over-temperature H L L
Under-voltage X L H
Figure1: Waveforms
Figure2: Over Current Test Circuit
VN05N
Figure3: Typical Application Circuit WithA Schottky Diode For Reverse Supply Protection
Figure4: Typical Application Circuit With Separate Signal Ground
VN05N

Partno	Mfg	Dc	Qty	Available	Descript
VN05N(011Y)	ST	N/a	1725	avai	HIGH SIDE SMART POWER SOLID STATE RELAY