VN03 ,ISO HIGH SIDE SMART POWER SOLID STATE RELAYABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitV Drain-Source Breakdown Voltage 60 V(BR)DSSoI Ou ..
VN0300L ,N-Channel Enhancement-Mode Vertical DMOS FETs
VN0300L ,N-Channel Enhancement-Mode Vertical DMOS FETs
VN0300L ,N-Channel Enhancement-Mode Vertical DMOS FETs
VN0300L ,N-Channel Enhancement-Mode Vertical DMOS FETsS-04279—Rev. E, 16-Jul-0111-1TN0201L/0401L, VN0300L/LSVishay Siliconix ..
VN0300L ,N-Channel Enhancement-Mode Vertical DMOS FETsTN0201L/0401L, VN0300L/LSVishay SiliconixN-Channel 20-, 30-, 40-V (D-S) MOSFETs Part Nu ..
WCMA1008C1X-TF70 , 128K x 8 Static RAM
WCMA1008U1X-SF55 , 128K x 8 Static RAM
WCMA2016U4B-FF70 , 128K x 16 Static RAM
WE2408 , 2.4GHz Single Chip FM Transceiver
WE9140A , TONE/PULSE SWITCHABLE DIALER WITH REDIAL
WE9140A , TONE/PULSE SWITCHABLE DIALER WITH REDIAL
VN03
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
VN03ISO HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATASeptember 1994
BLOCK DIAGRAM (*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
(#) The maximum continuous output current is the current at Tc = 85 o C for a battery voltage of 13 V which does not activate
self protection MAXIMUM CONTINUOUS OUTPUT
CURRENT (#): 4 A @ Tc= 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION
DESCRIPTION The VN03 is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The open drain diagnostic output indicates: open
load in off state and in on state, output shorted to
VCC and overtemperature. Fast demagnetization
of inductive loads is archieved by negative (-18V)
load voltage at turn-off.
1/11
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
VN032/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 o C unless otherwise specified)
POWER
SWITCHING
LOGIC INPUT
VN033/11
ELECTRICAL CHARACTERISTICS (continued)PROTECTION AND DIAGNOSTICS (continued)
(^) See Switchig Time Waveforms
(•) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
note 1: The Nominal Current is the current at Tc = 85 o C for battery voltage of 13V which produces a voltage drop of 0.5 V
note 2: IOL(off) = (VCC -VOL)/ROL (see figure)
note 3: t1(on): minimum open load duration which acctivates the status output
t1(off): minimum load recovery time which desactivates the status output
t2(off): minimum on time after thermal shut down which desactivates status output
tpovl tpol: ISO definition (see figure)
Note 2 Relevant Figure Note 3 Relevant Figure
VN034/11
FUNCTIONAL DESCRIPTION The device has a diagnostic output which
indicates open load conditions in off state as well
as in on state, output shorted to VCC and
overtemperature. The truth table shows input,
diagnostic and output voltage level in normal
operation and in fault conditions. The output
signals are processed by internal logic. The
open load diagnostic output has a 5 ms filtering.
The filter gives a continuous signal for the fault
condition after an initial delay of about 5 ms. This
means that a disconnection during normal
operation, with a duration of less than 5 ms does
not affect the status output. Equally, any
re-connection of less than 5 ms during a
disconnection duration does not affect the status
output. No delay occur for the status to go low in
case of overtemperature conditions. From the
falling edge of the input signal the status output
initially low in fault condition (over temperature or
open load) will go back with a delay (tpovl)in case
of overtemperature condition and a delay (tpol) in
case of open load. These feature fully comply
with International Standard Office (I.S.O.)
requirement for automotive High Side Driver.
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off at a
minimum junction temperature of 140 oC.
When the temperature returns to 125 o C the
switch is automatically turned on again. In short
circuit the protection reacts with virtually no
delay, the sensor being located in the region of
the die where the heat is generated. Driving
inductive loads, an internal function of the
device ensures the fast demagnetization with a
typical voltage (Vdemag) of -18V.
This function allows to greatly reduce the power
dissipation according to the formula:
Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f
where f = switching frequency and
Vdemag = demagnetization voltage
Based on this formula it is possible to know
the value of inductance and/or current to avoid
a thermal shut-down. The maximum inductance
which causes the chip temperature to reach the
shut down temperature in a specific thermal
environment, is infact a function of the load
current for a fixed VCC, Vdemag and f.
PROTECTING THE DEVICE AGAIST LOAD
DUMP - TEST PULSE 5 The device is able to withstand the test pulse
No. 5 at level II (Vs = 46.5V) according to the
ISO T/R 7637/1 without any external
component. This means that all functions of the
device are performed as designed after
exposure to disturbance at level II. The VN03 is
able to withstand the test pulse No.5 at level III
adding an external resistor of 150 ohm between
pin 1 and ground plus a filter capacitor of 1000
μF between pin 3 and ground (if RLOAD ≤ 20 Ω).
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1(GND) and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows: If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND). The undervoltage shutdown level is increa-
sed by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of Vih, Vil and Vstat. This
solution allows the use of a standard diode.
Switching Time Waveforms
VN035/11
TRUTH TABLE
Figure 1: Waveforms
Figure 2: Over Current Test Circuit
VN036/11
