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VN02N
HIGH SIDE SMART POWER SOLID STATE RELAY
VN02NHIGH SIDE SMART POWER SOLID STATE RELAY OUTPUT CURRENT (CONTINUOUS): 6A @
Tc=25oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION The VN02N is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
September 1994
BLOCK DIAGRAM 1/11
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
VN02N2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 o C unless otherwise specified)
POWER
SWITCHING
LOGIC INPUT
PROTECTIONS AND DIAGNOSTICS
VN02N3/11
ELECTRICAL CHARACTERISTICS (continued)PROTECTION AND DIAGNOSTICS (continued)
(*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
(•) Status determination > 100 μs after the switching edge.
FUNCTIONAL DESCRIPTION The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140 o C. When the
temperature returns to about 125 o C the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST REVER-
SE BATTERY The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows: If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL, VIH
thresholds and VSTAT are increased by VF with
respect to power GND). The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH, VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN02N4/11
TRUTH TABLE
Figure 1: Waveforms
Figure 2: Over Current Test Circuit
VN02N5/11
Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application Circuit With Separate Signal Ground
VN02N6/11
