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VCR2N-VCR7N
JFET Voltage Controlled Resistor
VCR2N/4N/7N
Vishay Siliconix
JFET V oltage-Controlled Resistors�������� �������� ������������ Continuous Voltage-Controlled
Resistance High Off-Isolation High Input Impedance Gain Ranging Capability/Wide Range
Signal Attenuation No Circuit Interaction Simplified Drive Variable Gain Amplifiers Voltage Controlled Oscillator AGC
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The VCR2N/4N/7N JFET voltage controlled resistors have an
ac drain-source resistance that is controlled by a dc bias
voltage (VGS) applied to their high impedance gate terminal.
Minimum rDS occurs when VGS = 0 V . As VGS approaches the
pinch-off voltage, rDS rapidly increases. This series of junction
FETs is intended for applications where the drain-source
voltage is a low-level ac signal with no dc component.
Key to device performance is the predictable rDS change
versus VGS bias where:DSbias�DS(@VGS �0)
1–�GS GS(off)�
These n-channel devices feature rDS(on) ranging from 20 to
8000 � . All packages are hermetically sealed and may be
processed per MIL-S-19500 (see Military Information).
G and Case
TO-206AA
(TO-18)Top View C
TO-206AF
(TO-72) G
Top View
VCR2N, VCR4N VCR7N