UPG503B ,9 GHz DIVIDE-BY-4 DYNAMIC PRESCALERELECTRICAL CHARACTERISTICS TA = 25°C to +75°C, VDD = 3.8 V, VSS1 = 0 V, VSS2 = -2.2 V)PART NUMBER ..
UPG506B ,14 GHz DIVIDE-BY-8 DYNAMIC PRESCALERELECTRICAL CHARACTERISTICS (TA = -25°C to +75°C, VDD = +3.8 V, VSS1 = 0 V, VSS2 = -2.2 V)PART NUM ..
UPM501.5 ,One - NON-ISOLATED, 40 WATT
UPR05 , 2.5 Amp Super Fast Recovery Silicon Rectifier 50 to 200 Volts
UPR20 , 2.5 Amp Super Fast Recovery Silicon Rectifier 50 to 200 Volts
UPS120E , 1 Amp Schottky Rectifier 20 to 40 Volts
VND05BSP ,DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAYVND05BSP®ISO HIGH SIDE SMART POWER SOLID STATE RELAYTYPE V R )I VDSS DS(on OUT CCVND05BSP 40 V 0.2 ..
VND10B ,DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAYABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitV Drain-Source Breakdown Voltage 40 V(BR)DSSoI Ou ..
VND10BSP ,ISO HIGH SIDE SMART POWER SOLID STATE RELAYBLOCK DIAGRAM1/9March 1998VND10BSP
VND10BSP13TR ,DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAYVND10BSPISO HIGH SIDE SMART POWER SOLID STATE RELAYTYPE V R )I VDSS DS(on OUT CCVND10BSP 40 V 0.1 Ω ..
VND10N06 ,"OMNIFET" FULLY AUTOPROTECTED POWER MOSFETVND10N06/VND10N06-1VNP10N06FI/K10N06FM"OMNIFET":FULLY AUTOPROTECTED POWER MOSFETTYPE V R Iclamp DS( ..
VND10N06. ,"OMNIFET" FULLY AUTOPROTECTED POWER MOSFETapplications. Built-in thermal shut-down, linearcurrent limitation and overvoltage clamp protectthe ..
UPG503B
