UPG2179TB ,NECs 1.5W L/ S-BAND SPDT SWITCHAPPLICATIONS HIGH POWER: L, S-band digital cellular and cordless telephones Pin (0.1 dB) = +29. ..
UPG2179TB-E4-A ,NECs 1.5W L/ S-BAND SPDT SWITCHNEC's 1.5W UPG2179TBL, S-BAND SPDT SWITCH
UPG2181T5R-E2 , GaAs INTEGRATED CIRCUIT HIGH POWER DP4T SWITCH FOR WiMAX
UPG2183T6C-E2-A , 4W HIGH POWER SP4T SWITCH
UPG2214TB ,NECs W LOW VOLTAGE L/ S-BAND SPDT SWITCHAPPLICATIONS 26 dB TYP. @ 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V• L, S-band digital ce ..
UPG2214TB-E4 , GaAs Integrated Circuit for L, S-Band SPDT Switch
VN920SPTR-E ,SINGLE CHANNEL HIGH SIDE SOLID STATE RELAYBlock diagram . . . . 5Figure 2. Configuration diagram (top view) . . . . . 5Figure 3. ..
VN920SPTR-E ,SINGLE CHANNEL HIGH SIDE SOLID STATE RELAYFeatures Type R I VDS(on) OUT CCVN920SP-E 15 mΩ 30 A 36 V®■ ECOPACK : lead free and RoHS co ..
VNB10N07 ,"OMNIFET" FULLY AUTOPROTECTED POWER MOSFETABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitPowerSO-10 SOT-82FM ISOWATT220D2PAKV Drain-source ..
VNB10N07TR-E ,OMNIFET :FULLY AUTOPROTECTED POWER MOSFETABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitPowerSO-10 SOT-82FM ISOWATT220D2PAKV Drain-source ..
VNB14N04 ,"OMNIFET" FULLY AUTOPROTECTED POWER MOSFETABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitPowerSO-10 SOT-82FM ISOWATT220D2PAKV Drain-source ..
VNB14NV04 ,"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFETFEATURES - OVERTEMPERATURE AND SHORT CIRCUITPROTECTION:During normal operation, the INPUT pin isele ..
UPG2179TB-UPG2179TB-E4-A
