UPG110B ,Gallium arsenide integrated circuitFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG110P ,2 to 8 GHz WIDE BAND AMPLIFIER CHIPFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG130GR ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.25 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 G ..
UPG132G ,L-BAND DPDT MMIC SWITCHDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG132Gμ μL-BAND SPDT SWITCHDESCRIPTIONμPG132G is an L-Band ..
UPG132G-E1 ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.6 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 GH ..
UPG133G-E1 ,L-BAND SPDT SWITCHDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG133Gμ μL-BAND SPDT SWITCHDESCRIPTIONUPG133G is an L-Band ..
VN4012L ,N-Channel Enhancement-Mode Vertical DMOS FETsS-—Rev. D, 20–Nov-0011-2VN3515L/VN4012LVishay Siliconix ..
VN410 , SMART DIRECTION INDICATOR 2 CHANNEL DRIVERS
VN450 ,THREE CHANNELS HIGH SIDE SMART SOLID STATE RELAY
VN450 ,THREE CHANNELS HIGH SIDE SMART SOLID STATE RELAY
VN460SP ,SINGLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAYVN460SP SINGLE CHANNEL HIGH SIDE SMARTSOLID STATE RELAYTYPE V R IOUT Vdema g DS(on) CCVN460SP V -5 ..
VN460SP ,SINGLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAYELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 C
UPG110B
