UPD9991F9-BA1 ,64 chords,up to 68 tones can be played simultaneously DATA SHEET MOS INTEGRATED CIRCUIT µPD9991 RING TONE GENERATOR LSI (WITH SURROUND SOUND ..
UPG101B ,Gallium arsenide integrated circuitDATA SHEETDATA SHEETGaAs INTEGRATED CIRCUITP PP PPG100P, P PP PPG101PWIDE BAND AMPLIFIER CH ..
UPG103B ,WIDE-BAND AMPLIFIERDATA SHEETGaAs INTEGRATED CIRCUITμ μ μPG103Bμ μWIDE-BAND AMPLIFIERμPG103B is GaAs integrated circu ..
UPG110B ,Gallium arsenide integrated circuitFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG110P ,2 to 8 GHz WIDE BAND AMPLIFIER CHIPFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG130GR ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.25 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 G ..
VN2410LS ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. F, 16-Jul-0111-1TN2410L, VN2406D/L, VN2410L/LSVishay Siliconix ..
VN2450N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
VN2450N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
VN2460N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
VN2460N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
VN30N , HIGH SIDE SMART POWER SOLID STATE RELAY
UPD9991F9-BA1
