UPA2780GR ,SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODEDATA SHEETMOS FIELD EFFECT TRANSISTOR µ µ µ µ PA2780GRSWITCHINGN-CHANNEL POWER MOS FET/SCHO ..
UPA2781GR ,SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODEDATA SHEETMOS FIELD EFFECT TRANSISTOR µ µ µ µ PA2781GRSWITCHINGN-CHANNEL POWER MOS FET/SCHO ..
UPA2782GR ,SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODEFEATURES• Built a Schottky Barrier Diode• Low on-state resistance6.0 ±0.314DS(on)1 = 11 mΩ TYP. (VG ..
UPA2790GR ,SWITCHING N- AND P-CHANNEL POWER MOS FETFEATURES 4 : Gate 2• Low on-state resistance 5, 6: Drain 2N-channel RDS(on)1 = 28 mΩ MAX. (VGS = ..
UPA2791GR , MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET
UPA3753GR , MOS FIELD EFFECT TRANSISTOR
UPD555 ,EVACHIPNEC
NEC Microcomputers, Inc. #P0555
EVACHIP-42
DESCRIPTION The ,uPDSSS is a system evaluat ..
UPD5555 , MOS INTEGRATED CIRCUIT
UPD5702TU-E2 ,2.4 GHz Si LD MOS power amplifier.ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specifi ed) PART ..
UPD5710TK ,NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCHapplications. Vcont (L) = −0.2 to +0.2 V (0 V TYP.)This device can operate from DC to 2.5GHz with l ..
UPD5710TK-E2 ,Wideband SPDT switch.APPLICATIONS• POWER HANDLING:• MOBILE COMMUNICATIONS Pin (0.1 dB) = +17.0 dBm TYP. @ f = 1.0GHz, VD ..
UPD5710TK-E2-A ,NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCHAPPLICATIONS• POWER HANDLING:• MOBILE COMMUNICATIONS Pin (0.1 dB) = +17.0 dBm TYP. @ 1.0GHz, VDD = ..
UPA2780GR
