UPA2755GR.. ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTORµ PA2755GRSWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACK ..
UPA2756GR ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTORµ PA2756GRSWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACK ..
UPA2757GR , MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
UPA2757GR-E1-AT , MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
UPA2761UGR , MOS FIELD EFFECT TRANSISTOR
UPA2761UGR , MOS FIELD EFFECT TRANSISTOR
UPD555 ,EVACHIPNEC
NEC Microcomputers, Inc. #P0555
EVACHIP-42
DESCRIPTION The ,uPDSSS is a system evaluat ..
UPD5555 , MOS INTEGRATED CIRCUIT
UPD5702TU-E2 ,2.4 GHz Si LD MOS power amplifier.ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specifi ed) PART ..
UPD5710TK ,NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCHapplications. Vcont (L) = −0.2 to +0.2 V (0 V TYP.)This device can operate from DC to 2.5GHz with l ..
UPD5710TK-E2 ,Wideband SPDT switch.APPLICATIONS• POWER HANDLING:• MOBILE COMMUNICATIONS Pin (0.1 dB) = +17.0 dBm TYP. @ f = 1.0GHz, VD ..
UPD5710TK-E2-A ,NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCHAPPLICATIONS• POWER HANDLING:• MOBILE COMMUNICATIONS Pin (0.1 dB) = +17.0 dBm TYP. @ 1.0GHz, VDD = ..
UPA2755GR-UPA2755GR..
