UPA2752GR-E2 ,Nch enhancement-type MOSFET (Dual type)ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CON ..
UPA2753GR ,SWITCHING N-CHANNEL POWER MOSFETFEATURES4 ; Gate 2• Dual chip type 5, 6; Drain 2• Low on-state resistance 6.0 ±0.3144.4RDS(on)1 = ..
UPA2753GR-E2 ,Nch enhancement-type MOSFET (Dual type)FEATURES4 ; Gate 2• Dual chip type 5, 6; Drain 2• Low on-state resistance 6.0 ±0.3144.4RDS(on)1 = ..
UPA2754GR ,SWITCHING N-CHANNEL POWER MOSFETFEATURES3 : Source 24 : Gate 2• Dual chip type5, 6: Drain 2• Low on-state resistanceRDS(on)1 ..
UPA2754GR-E1 ,Nch enhancement-type MOSFET (Dual type)FEATURES3 : Source 24 : Gate 2• Dual chip type5, 6: Drain 2• Low on-state resistanceRDS(on)1 ..
UPA2755GR ,SWITCHING N-CHANNEL POWER MOSFETapplications of notebook computers. 1 : Source 12 : Gate 1 7, 8: Drain 13 : Source 2
UPD5205CA ,Analog multiplexer.features, the PPD5205 is the optimum choice for data acquisition system.
UPD5205G ,Analog multiplexer.TYPICAL CHARACTERISTICS
q Wide Supply Voltage: 44 V0 Low ON Resistance: 270 n TYP. (Ta m 26 "C)
. ..
UPD555 ,EVACHIPNEC
NEC Microcomputers, Inc. #P0555
EVACHIP-42
DESCRIPTION The ,uPDSSS is a system evaluat ..
UPD5555 , MOS INTEGRATED CIRCUIT
UPD5702TU-E2 ,2.4 GHz Si LD MOS power amplifier.ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specifi ed) PART ..
UPD5710TK ,NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCHapplications. Vcont (L) = −0.2 to +0.2 V (0 V TYP.)This device can operate from DC to 2.5GHz with l ..
UPA2752-UPA2752GR-E1-UPA2752GR-E2
