UPA2750-GR-E2 ,Nch enhancement-type MOS FET (Dual type)ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CON ..
UPA2750GR-E2 ,Nch enhancement-type MOS FET (Dual type)FEATURES3 ; Source 2• Dual chip type4 ; Gate 2• Low on-state resistance 5, 6; Drain 2RDS(on)1 = ..
UPA2751GR ,SWITCHING N-CHANNEL POWER MOSFETFEATURES3 ; Source 2CH1• Asymmetric dual chip type4 ; Gate 25, 6; Drain 2• Low on-state resistan ..
UPA2751GR-E1 ,Nch enhancement-type MOSFET (Dual type)FEATURES3 ; Source 2CH1• Asymmetric dual chip type4 ; Gate 25, 6; Drain 2• Low on-state resistan ..
UPA2752 ,Nch enhancement-type MOSFET (Dual type)FEATURES3 : Source 24 : Gate 2• Dual chip type5, 6 : Drain 2• Low on-state resistanceRDS(on)1 = 23. ..
UPA2752GR ,SWITCHING N-CHANNEL POWER MOSFETFEATURES3 : Source 24 : Gate 2• Dual chip type5, 6 : Drain 2• Low on-state resistanceRDS(on)1 = 23. ..
UPD5205CA ,Analog multiplexer.features, the PPD5205 is the optimum choice for data acquisition system.
UPD5205G ,Analog multiplexer.TYPICAL CHARACTERISTICS
q Wide Supply Voltage: 44 V0 Low ON Resistance: 270 n TYP. (Ta m 26 "C)
. ..
UPD555 ,EVACHIPNEC
NEC Microcomputers, Inc. #P0555
EVACHIP-42
DESCRIPTION The ,uPDSSS is a system evaluat ..
UPD5555 , MOS INTEGRATED CIRCUIT
UPD5702TU-E2 ,2.4 GHz Si LD MOS power amplifier.ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specifi ed) PART ..
UPD5710TK ,NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCHapplications. Vcont (L) = −0.2 to +0.2 V (0 V TYP.)This device can operate from DC to 2.5GHz with l ..
UPA2750-UPA2750GR-E1-UPA2750-GR-E2-UPA2750GR-E2
