UPA1911TE-T1 ,Pch enhancement type MOS FETFEATURES12 3• Can be driven by a 2.5-V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = ..
UPA1912TE ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES• Can be driven by a 2.5-V power source0.65• Low on-state resistance 0.95 0.951.9RDS(on)1 = ..
UPA1912TE-T1 ,Pch enhancement type MOS FETFEATURES• Can be driven by a 2.5-V power source0.65• Low on-state resistance 0.95 0.951.9RDS(on)1 = ..
UPA1913/TE ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12 3• Can be driven by a 2.5-V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = ..
UPA1913TE ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
UPA1913TE-T1 ,Pch enhancement type MOS FETFEATURES 12 3• Can be driven by a 2.5-V power source• Low on-state resistance0.650.95 0.95RDS(on)1 ..
UPD45D128842G5-C75-9LG ,128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMFeatures• 33,554,432 words by 64 bits organization• Clock frequencyPart number /CAS latency Clock f ..
UPD4616112F9-B85LX-BC2 ,16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAMFeatures• 1,048,576 words by 16 bits organization• Fast access time: 85, 95 ns (MAX.)• Byte data co ..
UPD4701A ,Counter for the encoderapplications which use a pointingdevice such as a mouse or track-ball. The CPU checks the switch i ..
UPD4701AC ,Counter for the encoderDATA SHEETMOS INTEGRATED CIRCUITμPD4701AINCREMENTAL ENCODER COUNTERDESCRIPTIONThe μPD4701A is ..
UPD4701AGT ,Counter for the encoderDATA SHEETMOS INTEGRATED CIRCUITμPD4701AINCREMENTAL ENCODER COUNTERDESCRIPTIONThe μPD4701A is ..
UPD4702C ,INCREMENTAL ENCODER 8-BIT UP/DOWN COUNTER CMOS INTEGRATED CIRCUITSFEATURES• Incremental inputs (A, B)• On-chip phase discrimination circuit (up-count modeReset 1 20 ..
UPA1911TE-T1
