UPA1872GR-9JG-E1 ,N-channel enhancement type MOS FETFEATURES+5°3°–3°• 2.5 V drive available0.50.1±0.05+0.15• Low on-state resistance0.6–0.114RDS(on)1 = ..
UPA1874BGR-9JG-E1 ,N-channel enhancement type MOS FET
UPA1900TE ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES0.65• Can be driven by a 2.5 V power source 0.95 0.951.9• Low on-state resistance0.9 to 1.1 ..
UPA1900TE-T1 ,Nch enhancement type MOS FETFEATURES0.65• Can be driven by a 2.5 V power source 0.95 0.951.9• Low on-state resistance0.9 to 1.1 ..
UPA1901TE ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12 3• 2.5 V drive available• Low on-state resistanceRDS(on)1 = 39 mΩ MAX. (VGS = 4.5 V, ID ..
UPA1901TE-T1 ,Nch enhancement type MOS FETFEATURES12 3• 2.5 V drive available• Low on-state resistanceRDS(on)1 = 39 mΩ MAX. (VGS = 4.5 V, ID ..
UPD4564323G5-A10-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A10B-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A70-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A80-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD45D128842G5-C75-9LG ,128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMFeatures• 33,554,432 words by 64 bits organization• Clock frequencyPart number /CAS latency Clock f ..
UPD4616112F9-B85LX-BC2 ,16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAMFeatures• 1,048,576 words by 16 bits organization• Fast access time: 85, 95 ns (MAX.)• Byte data co ..
UPA1872GR-9JG-E1
