UPA1858GR-9JG-E2 ,Pch enhancement MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTORµ µ µ µ PA1858P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCH ..
UPA1870 ,N-channel enhancement type MOS FETFEATURES3°–3°0.5• Can be driven by a 2.5-V power source0.1±0.05+0.150.6–0.1• Low on-state resistanc ..
UPA1870BGR-9JG ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTORµ PA1870BN-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING ..
UPA1870BGR-9JG-E1 ,N-channel enhancement type MOS FETfeatures a low on-state resistance and The 1 :Drain11.2 MAX.2, 3 :Source1excellent switchin ..
UPA1870GR-9JG-E1 ,N-channel enhancement type MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
UPA1871GR-9JG-E1 ,N-channel enhancement type MOS FETFEATURES3°–3°0.5• Can be driven by a 2.5-V power source0.1±0.05+0.150.6–0.1• Low on-state resistanc ..
UPD4564163G5 ,64M Bit SDRAM / 4 BankDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD4564441, 4564841, 456416364M-bit Synchronous DRAM4-bank, ..
UPD4564323G5-A10-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A10B-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A70-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A80-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD45D128842G5-C75-9LG ,128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMFeatures• 33,554,432 words by 64 bits organization• Clock frequencyPart number /CAS latency Clock f ..
UPA1858GR-9JG-E2
