UPA1853 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES+5°3°–3°Can be driven by a 4-V power source• 0.50.1±0.05+0.15• Low on-state resistance 0.6– ..
UPA1854GR-9JG-E1 ,Pch enhancement type MOS FETFEATURES+5°3°–3°• Can be driven by a 2.5-V power source 0.50.1±0.05+0.15• Low on-state resistance 0 ..
UPA1855 ,Nch enhancement type MOS FETFEATURES+5°3°–3°• Can be driven by a 2.5 V power source0.50.1±0.05• Low on-state resistance +0.150. ..
UPA1855GR-9JG-E1 ,Nch enhancement type MOS FETELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
UPA1856 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
UPA1856GR-9JG ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES3°–3°0.5• Can be driven by a 2.5-V power source0.1±0.05+0.150.6–0.1• Low on-state resistanc ..
UPD4564163G5 ,64M Bit SDRAM / 4 BankDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD4564441, 4564841, 456416364M-bit Synchronous DRAM4-bank, ..
UPD4564323G5-A10-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A10B-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A70-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A80-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD45D128842G5-C75-9LG ,128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMFeatures• 33,554,432 words by 64 bits organization• Clock frequencyPart number /CAS latency Clock f ..
UPA1853
