UPA1803 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES0.1±0.05+0.150.6–0.1• Can be driven by a 4.5-V power source14• Low on-state resistanceRDS(o ..
UPA1803GR-9JG-E1 ,Nch enhancement type MOS FETFEATURES 0.50.1±0.05+0.150.6–0.1• Can be driven by a 4.5-V power source14• Low on-state resistanceR ..
UPA1803GR-9JG-E2 ,Nch enhancement type MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
UPA1804 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES0.1±0.05+0.150.6–0.1• Can be driven by a 4.5 V power source14• Low on-state resistanceRDS(o ..
UPA1807GR-9JG-E2 ,N Channel enhancement MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTORµµµµ PA1807N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHING ..
UPA1813 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPD4564163G5 ,64M Bit SDRAM / 4 BankDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD4564441, 4564841, 456416364M-bit Synchronous DRAM4-bank, ..
UPD4564323G5-A10-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A10B-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A70-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A80-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD45D128842G5-C75-9LG ,128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMFeatures• 33,554,432 words by 64 bits organization• Clock frequencyPart number /CAS latency Clock f ..
UPA1803
