UPA1792G-E1 ,N-ch + P-ch enhancement type power MOS FETFEATURES• Low on-state resistance 6.0 ±0.3144.45.37 Max. 0.8N-channel RDS(on)1 = 26 mΩ MAX. (VGS = ..
UPA1792G-E2 ,N-ch + P-ch enhancement type power MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTORµµ PA1792µµ SWITCHINGN- AND P-CHANNEL POWER MOS FETDESCRIPT ..
UPA1793 ,SWITCHING N- AND P-CHANNEL POWER MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTORµµµµ PA1793SWITCHINGN- AND P-CHANNEL POWER MOS FETPACKAGE ..
UPA1793G ,SWITCHING N- AND P-CHANNEL POWER MOS FETFEATURESP-Channel 3 ; Source 24 ; Gate 2• Low on-state resistance5, 6; Drain 2N-Channel RDS(on)1 ..
UPA1802 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES +5°3°–3°• Can be driven by a 2.5-V power source 0.50.1±0.05+0.150.6• Low on-state resistan ..
UPA1803 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES0.1±0.05+0.150.6–0.1• Can be driven by a 4.5-V power source14• Low on-state resistanceRDS(o ..
UPD4564163G5 ,64M Bit SDRAM / 4 BankDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD4564441, 4564841, 456416364M-bit Synchronous DRAM4-bank, ..
UPD4564323G5-A10-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A10B-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A70-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A80-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD45D128842G5-C75-9LG ,128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMFeatures• 33,554,432 words by 64 bits organization• Clock frequencyPart number /CAS latency Clock f ..
UPA1792G-E1-UPA1792G-E2
