UPA1774G ,SWITCHING DUAL P-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CON ..
UPA1790 ,SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURESP-Channel 3 ; Source 24 ; Gate 2• Dual chip type5,6 ; Drain 2• Low on-resistance6.0 ±0.314N ..
UPA1790G ,SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT TRANSISTORPA1790μ μ μ μ SWITCHINGN-AND P-CHANNEL POWER MOS FETINDUST ..
UPA1792 ,SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT TRANSISTORPA1792μ μ μ μ SWITCHINGN- AND P-CHANNEL POWER MOS FETINDUS ..
UPA1792G ,SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURESP-Channel 3 ; Source 24 ; Gate 2• Low on-resistance5,6 ; Drain 2DS(on)1 GS DN-Channel R = 2 ..
UPA1792G-E1 ,N-ch + P-ch enhancement type power MOS FETFEATURES• Low on-state resistance 6.0 ±0.3144.45.37 Max. 0.8N-channel RDS(on)1 = 26 mΩ MAX. (VGS = ..
UPD4564163G5 ,64M Bit SDRAM / 4 BankDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD4564441, 4564841, 456416364M-bit Synchronous DRAM4-bank, ..
UPD4564323G5-A10-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A10B-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A70-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A80-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD45D128842G5-C75-9LG ,128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMFeatures• 33,554,432 words by 64 bits organization• Clock frequencyPart number /CAS latency Clock f ..
UPA1774-UPA1774G
