UPA1760G-E1 ,N-channel enhancement type power MOS FET(Dual type)DATA SHEETMOS FIELD EFFECT TRANSISTORµµµµ PA1760SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCR ..
UPA1760G-E2 ,N-channel enhancement type power MOS FET(Dual type)FEATURES5, 6; Drain 2• Dual Chip Type6.0 ±0.3144.4• Low On-Resistance5.37 Max. 0.8RDS(on)1 = 26.0 ..
UPA1763 ,SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES3 : Source 2• Dual chip type4 : Gate 25, 6 : Drain 2• Low on-resistanceRDS(on)1 = 47.0 mΩ M ..
UPA1763G ,SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1763G-E1 ,N-channel enhancement type power MOS FET(Dual type)ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1763G-E1 ,N-channel enhancement type power MOS FET(Dual type)FEATURES3 : Source 2• Dual chip type4 : Gate 25, 6 : Drain 2• Low on-resistanceRDS(on)1 = 47.0 mΩ M ..
UPD45128163G5-A75L-9JF , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163G5-A75L-9JF , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163G5-A75LI-9JF-E , 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A75LI-9JF-E , 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A80-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 8ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128441G5-A10B-9JF ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPA1760G-UPA1760G-E1-UPA1760G-E2
