UPA1757 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFeatures• Dual MOS FET chips in small package3 ; Source 24 ; Gate 2• 2.5 V gate drive type and lo ..
UPA1758 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Dual MOS FET chips in small package85• 2.5 V gate drive type low on-state resistance1 ; ..
UPA1758G-E2 ,Dual type N-channel enhanced power MOS FETFEATURES• Dual MOS FET chips in small package85• 2.5 V gate drive type low on-state resistance1 ; ..
UPA1758G-E2 ,Dual type N-channel enhanced power MOS FETELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
UPA1759 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT TRANSISTORPA1759μ μ μ μ SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL U ..
UPA1759G ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Dual chip type3 ; Source 24 ; Gate 2• Low on-resistance5, 6; Drain 2RDS(on)1 = 110 mΩ ..
UPD45128163G5 , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163G5-A10-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A10B-9JF ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75 ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 7.5ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75L-9JF , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPA1757
