UPA1755 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES3 ; Source 24 ; Gate 2• Dual chip type5, 6; Drain 2• Low on-resistance6.0 ±0.314RDS(on)1 ..
UPA1755G-E1 ,Nch enhancement type power MOS FET(Dual type)FEATURES3 ; Source 24 ; Gate 2• Dual chip type5, 6; Drain 2• Low on-resistance6.0 ±0.314RDS(on)1 ..
UPA1755G-E2 ,Nch enhancement type power MOS FET(Dual type)ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1756 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
UPA1756G ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES4 ; Gate 2• Dual MOS FET chips in small package5, 6; Drain 2• 2.5-V gate drive type and l ..
UPA1757 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFeatures• Dual MOS FET chips in small package3 ; Source 24 ; Gate 2• 2.5 V gate drive type and lo ..
UPD45128163G5 , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163G5-A10-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A10B-9JF ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75 ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 7.5ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75L-9JF , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPA1755
