UPA1731G-E2 ,Pch enhancement type power MOS FETELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1740TP ,N-ch power MOS FET (switching element)FEATURES• High voltage: VDSS = 200 V6.0 ±0.314• Gate voltage rating: ±30 V+0.17 0.8 ±0.2 4.4 ±0.155 ..
UPA1741TP ,N-ch power MOS FET (switching element)DATA SHEETMOS FIELD EFFECT TRANSISTORµµµµ PA1741TPSWITCHINGN-CHANNEL POWER MOS FETPACKAGE DRAWING ..
UPA1755 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES3 ; Source 24 ; Gate 2• Dual chip type5, 6; Drain 2• Low on-resistance6.0 ±0.314RDS(on)1 ..
UPA1755G-E1 ,Nch enhancement type power MOS FET(Dual type)FEATURES3 ; Source 24 ; Gate 2• Dual chip type5, 6; Drain 2• Low on-resistance6.0 ±0.314RDS(on)1 ..
UPA1755G-E2 ,Nch enhancement type power MOS FET(Dual type)ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPD45128163G5 , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163G5-A10-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A10B-9JF ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75 ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 7.5ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75L-9JF , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPA1731G-E1-UPA1731G-E2
