UPA1730 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low on-resistance6.0 ±0.314RDS(on)1 = 9.5 mΩ MAX. (VGS = –10 V, ID = –6.5 A)4.45.37 MAX. ..
UPA1730G ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1730G-E1 ,Pch enhancement type power MOS FETFEATURES• Low on-resistanceRDS(on)1 = 9.5 mΩ MAX. (VGS = –10 V, ID = –6.5 A)6.0 ±0.314RDS(on)2 = 13 ..
UPA1730G-E-1 ,Pch enhancement type power MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTORµ µ µ µ PA1730SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDE ..
UPA1731 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low on-resistance6.0 ±0.314RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A)4.45.37 MAX. ..
UPA1731G-E1 ,Pch enhancement type power MOS FETFEATURES• Low on-resistance6.0 ±0.314RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A)4.45.37 Max. ..
UPD45128163G5 , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163G5-A10-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A10B-9JF ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75 ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 7.5ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75L-9JF , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPA1730-UPA1730G
