UPA1726 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• 2.5-V gate drive and low on-resistanceRDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A)6.0 ..
UPA1726G ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1727 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Single chip type• Low On-state Resistance6.0 ±0.3144.45.37 Max.★ RDS(on)1 = 14 mΩ (TYP.) ..
UPA1727G ,Nch power MOS FET 8-pin SOP single 60VFEATURES5, 6, 7, 8 ; Drain• Single chip type• Low on-state resistanceRDS(on)1 = 14 mΩ TYP. (VGS = ..
UPA1728 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Single chip type• Low On-state Resistance6.0 ±0.3★ RDS(on)1 = 19 mΩ (TYP.) (VGS = 10 V, I ..
UPA1728G ,Nch power MOS FET 8-pin SOP single 60VFEATURES5, 6, 7, 8 ; Drain• Single chip type• Low on-state resistanceRDS(on)1 = 19 mΩ TYP. (VGS = ..
UPD45128163G5 , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163G5-A10-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A10B-9JF ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75 ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 7.5ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A75L-9JF , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPA1726-UPA1726G
