UPA1724G-E1 ,N-channel enhancement type power MOS FETELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1724G-E1 ,N-channel enhancement type power MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTORPA1724μ μ μ μ SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL U ..
UPA1724G-E2 ,N-channel enhancement type power MOS FETFEATURES• 2.5-V gate drive and low on-resistanceRDS(on)1 = 11.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)6. ..
UPA1725 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• 2.5-V gate drive and low on-resistance6.0 ±0.314RDS(on)1 = 21.0 mΩ MAX. (VGS = 4.5 V, ID ..
UPA1725G ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1726 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• 2.5-V gate drive and low on-resistanceRDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A)6.0 ..
UPD4482323GF-A60 ,8M-bit(256K-word x 32-bit) Synchronous SRAMDATA SHEETMOS INTEGRATED CIRCUITµ PD4482163, 4482183, 4482323, 44823638M-BIT CMOS SYNCHRONOUS FAST ..
UPD4482361GF-A75 ,8M-bit(256K-word x 36-bit) Synchronous SRAMDATA SHEETMOS INTEGRATED CIRCUITµ PD4482161, 4482181, 4482321, 44823618M-BIT CMOS SYNCHRONOUS FAST ..
UPD4482362GF-A60 ,8M-bit(256K-word x 36-bit) Synchronous SRAMDATA SHEETMOS INTEGRATED CIRCUITµ PD4482162, 4482182, 4482322, 44823628M-BIT CMOS SYNCHRONOUS FAST ..
UPD45128163G5 , 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163G5-A10-9JF ,128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3VDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPD45128163G5-A10B-9JF ,128M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD45128441, 45128841, 45128163128M-bit Synchronous DRAM4-ba ..
UPA1724G-E1-UPA1724G-E2
