UPA1716G-E2 ,Pch enhancement type power MOS FETapplications of notebook computers. PACKAGE DRAWING (Unit : mm)
UPA1717G ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low on-state resistanceRDS(on)1 = 33 mΩ MAX. (VGS = - 10 V, ID = - 3 A)6.0 ±0.314RDS(on)2 ..
UPA1717G-E1 ,P-channel enhancement type power MOS FETFEATURES• Low on-state resistanceRDS(on)1 = 33 mΩ MAX. (VGS = - 10 V, ID = - 3 A)6.0 ±0.314RDS(on)2 ..
UPA1717G-E2 ,P-channel enhancement type power MOS FETELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1720 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low On-ResistanceRDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A)RDS(on)2 = 33.0 mΩ MAX. ..
UPA1720G ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPD4464G-15 ,8,192 X 8NEC
NEC Electronics Inc.
yPD4464
8,192 x 8-3"
STATIC CMOS RAM
Description
ThepPD4464 ..
UPD4464G-15L ,8,192 X 8Pin Configuration
28-Pln Plastic DIP or Mlnlflat
Address inputs
Data inputs/outputs
E Chi ..
UPD4464G-20L ,8,192 X 8NEC
NEC Electronics Inc.
yPD4464
8,192 x 8-3"
STATIC CMOS RAM
Description
ThepPD4464 ..
UPD448012GY-B55X-MJH ,8M-bit(512K-word x 16-bit) Low power SRAMFeatures• 524,288 words by 16 bits organization • Fast access time: 55, 70, 85, 100, 120 ns (MAX.) ..
UPD448012GY-B70X-MJH ,8M-bit(512K-word x 16-bit) Low power SRAMDATA SHEETMOS INTEGRATED CIRCUITµµµµ PD448012-X8M-BIT CMOS STATIC RAM512K-WORD BY 16-BITEXTENDED TE ..
UPD4481182GF-A75 ,8M-bit(512K-word x 18-bit) ZEROSB(TM) SRAMDATA SHEETMOS INTEGRATED CIRCUITµ PD4481162, 4481182, 4481322, 4481362TM8M-BIT ZEROSB SRAMPIPELINE ..
UPA1716G-E1-UPA1716G-E2
