UPA1715G-E1 ,Pch enhancement type power MOS FETFEATURES• Low on-resistance85RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A)RDS(on)2 = 11.0 mΩ TY ..
UPA1715G-E1 ,Pch enhancement type power MOS FETELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1715G-E2 ,Pch enhancement type power MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTORPA1715μ μ μ μ SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USED ..
UPA1716 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low on-resistance85RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A)RDS(on)2 = 17.0 mΩ TYP ..
UPA1716G ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1716G-E1 ,Pch enhancement type power MOS FETFEATURES• Low on-resistance85RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A)RDS(on)2 = 17.0 mΩ TYP ..
UPD4464C-15 ,8,192 X 8Pin Configuration
28-Pln Plastic DIP or Mlnlflat
Address inputs
Data inputs/outputs
E Chi ..
UPD4464C-15L ,8,192 X 8Pin Configuration
28-Pln Plastic DIP or Mlnlflat
Address inputs
Data inputs/outputs
E Chi ..
UPD4464C-20 ,8,192 X 8Pin Configuration
28-Pln Plastic DIP or Mlnlflat
Address inputs
Data inputs/outputs
E Chi ..
UPD4464C-20L ,8,192 X 8Pin Configuration
28-Pln Plastic DIP or Mlnlflat
Address inputs
Data inputs/outputs
E Chi ..
UPD4464G-15 ,8,192 X 8NEC
NEC Electronics Inc.
yPD4464
8,192 x 8-3"
STATIC CMOS RAM
Description
ThepPD4464 ..
UPD4464G-15L ,8,192 X 8Pin Configuration
28-Pln Plastic DIP or Mlnlflat
Address inputs
Data inputs/outputs
E Chi ..
UPA1715G-E1-UPA1715G-E2
