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UPA1715G-E1 |UPA1715GE1N/a34700avaiPch enhancement type power MOS FET
UPA1715G-E1 |UPA1715GE1NECN/a2500avaiPch enhancement type power MOS FET
UPA1715G-E2 |UPA1715GE2NECN/a2500avaiPch enhancement type power MOS FET


UPA1715G-E1 ,Pch enhancement type power MOS FETFEATURES• Low on-resistance85RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A)RDS(on)2 = 11.0 mΩ TY ..
UPA1715G-E1 ,Pch enhancement type power MOS FETELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1715G-E2 ,Pch enhancement type power MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTORPA1715μ μ μ μ SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USED ..
UPA1716 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low on-resistance85RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A)RDS(on)2 = 17.0 mΩ TYP ..
UPA1716G ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1716G-E1 ,Pch enhancement type power MOS FETFEATURES• Low on-resistance85RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A)RDS(on)2 = 17.0 mΩ TYP ..
UPD4464C-15 ,8,192 X 8Pin Configuration 28-Pln Plastic DIP or Mlnlflat Address inputs Data inputs/outputs E Chi ..
UPD4464C-15L ,8,192 X 8Pin Configuration 28-Pln Plastic DIP or Mlnlflat Address inputs Data inputs/outputs E Chi ..
UPD4464C-20 ,8,192 X 8Pin Configuration 28-Pln Plastic DIP or Mlnlflat Address inputs Data inputs/outputs E Chi ..
UPD4464C-20L ,8,192 X 8Pin Configuration 28-Pln Plastic DIP or Mlnlflat Address inputs Data inputs/outputs E Chi ..
UPD4464G-15 ,8,192 X 8NEC NEC Electronics Inc. yPD4464 8,192 x 8-3" STATIC CMOS RAM Description ThepPD4464 ..
UPD4464G-15L ,8,192 X 8Pin Configuration 28-Pln Plastic DIP or Mlnlflat Address inputs Data inputs/outputs E Chi ..


UPA1715G-E1-UPA1715G-E2

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