UPA1707G-E2 ,Nch enhancement type power MOS FETFEATURES• Low on-resistanceRDS(on)1 = 10.0 mΩ TYP. (VGS = 10 V, ID = 5.0 A)6.0 ±0.3144.4RDS(on)2 ..
UPA1708 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected)CHARACTERISTICS SYMBOL TEST COND ..
UPA1708G-E1 ,Nch enhancement type power MOS FETFEATURES• Low on-resistance6.0 ±0.3RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A)144.4RDS(on)2 ..
UPA1708G-E2 ,Nch enhancement type power MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected)CHARACTERISTICS SYMBOL TEST COND ..
UPA1709 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1709G ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES PACKAGE DRAWING (Unit : mm)• Low on-resistance85RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = ..
UPD444012AGY-B55X-MJH ,4M-bit(256K-word x 16-bit) Low Power SRAMFeatures• 262,144 words by 16 bits organization
UPA1707G-E1-UPA1707G-E2
