UPA1706G-E2 ,Nch enhancement type power MOS FETELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected)CHARACTERISTICS SYMBOL TEST CON ..
UPA1707 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1707G-E1 ,Nch enhancement type power MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CON ..
UPA1707G-E2 ,Nch enhancement type power MOS FETFEATURES• Low on-resistanceRDS(on)1 = 10.0 mΩ TYP. (VGS = 10 V, ID = 5.0 A)6.0 ±0.3144.4RDS(on)2 ..
UPA1708 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected)CHARACTERISTICS SYMBOL TEST COND ..
UPA1708G-E1 ,Nch enhancement type power MOS FETFEATURES• Low on-resistance6.0 ±0.3RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A)144.4RDS(on)2 ..
UPD444001LE-12 ,4M-bit(4M-word x 1-bit) Fast SRAMFeatures• 4,194,304 words by 1 bit organization• Fast access time : 10, 11, 12 ns (MAX.)• Output En ..
UPD444004LLE-A10 ,4M-bit(1M-word x 4-bit) Fast SRAMFeatures• 1,048,576 words by 4 bits organization• Fast access time : 8, 10, 12 ns (MAX.)• Output En ..
UPD444008LE-12 ,4M-bit(512K-word x 8-bit) Fast SRAMFeatures• 524,288 words by 8 bits organization• Fast access time : 8, 10, 12 ns (MAX.)• Output Enab ..
UPD444008LLE-A12 ,4M-bit(512K-word x 8-bit) Fast SRAMPin Configuration (Marking Side)/××× indicates active low signal.36-pin PLASTIC SOJ (10.16 mm (400) ..
UPD444008LLE-A12 ,4M-bit(512K-word x 8-bit) Fast SRAMFeatures• 524,288 words by 8 bits organization• Fast access time : 8, 10, 12, ns (MAX.)• Output Ena ..
UPD444012AGY-B55X-MJH ,4M-bit(256K-word x 16-bit) Low Power SRAMFeatures• 262,144 words by 16 bits organization
UPA1706G-E1-UPA1706G-E2
