UPA1704 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• 2.5-V gate drive and low on-resistance6.0 ±0.314RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = ..
UPA1704G ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1704G-E2 ,Nch power MOSFET (UMOS) 8-pin SOPFEATURES• 2.5-V gate drive and low on-resistance6.0 ±0.314RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = ..
UPA1705 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Super low on-state resistance6.0 ±0.3144.4RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A ..
UPA1705G ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1705G-E2 ,Power MOSFETFEATURES• Super low on-state resistance6.0 ±0.3144.4RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A ..
UPD44325184F5-E50-EQ2 , 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44325362F5-E40-EQ2 , 36M-BIT QDRII SRAM 2-WORD BURST OPERATION
UPD44325364F5-E40-EQ2 , 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD444001LE-12 ,4M-bit(4M-word x 1-bit) Fast SRAMFeatures• 4,194,304 words by 1 bit organization• Fast access time : 10, 11, 12 ns (MAX.)• Output En ..
UPD444004LLE-A10 ,4M-bit(1M-word x 4-bit) Fast SRAMFeatures• 1,048,576 words by 4 bits organization• Fast access time : 8, 10, 12 ns (MAX.)• Output En ..
UPD444008LE-12 ,4M-bit(512K-word x 8-bit) Fast SRAMFeatures• 524,288 words by 8 bits organization• Fast access time : 8, 10, 12 ns (MAX.)• Output Enab ..
UPA1704-UPA1704G
