UPA1701A ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C )CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITD ..
UPA1701AG ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• 2.5 V gate drive and low on-resistanceRDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) 6 ..
UPA1701AG-E1 ,Nch UMOSFET 8-pin SOP single 20VFEATURES• 2.5 V gate drive and low on-resistanceRDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) 6 ..
UPA1701AG-E2 ,Nch UMOSFET 8-pin SOP single 20VELECTRICAL CHARACTERISTICS (TA = 25 °C )CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITD ..
UPA1703 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT POWER TRANSISTORSμ μ μ μPA1703SWITCHINGN-CHANNEL POWER MOS FETIN ..
UPA1703G , SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPD44321362GF-A50 ,32M-bit(1M-word x 36-bit) ZEROSB(TM) SRAMFeatures• Low voltage core supply : VDD = 3.3 ± 0.165 V / 2.5 ± 0.125 V • Synchronous operation• Op ..
UPD44324182F5-E40-EQ2 , 36M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44324362F5-E40-EQ2 , 36M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44325092F5-E50-EQ2 , 36M-BIT QDRII SRAM 2-WORD BURST OPERATION
UPD44325184F5-E50-EQ2 , 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44325362F5-E40-EQ2 , 36M-BIT QDRII SRAM 2-WORD BURST OPERATION
UPA1701A-UPA1701AG
