UPA1576H ,NNotice: You cannot copy or search for text in this PDF file, because this PDF
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UPA1600 ,Monolithic power MOS FET arrayELECTRICAL CHARACTERISTICS (Ta IT, 25 °C)
CHARACTERISTIC
Output Leakage Current
Output On- ..
UPA1600CX ,Monolithic power MOS FET arrayFEATURES
0 Direct driving is possible by standard Logic IC or Microcomputer.
(4 V driving is po ..
UPA1600GS ,Monolithic power MOS FET arrayapplications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Output Voltage V0 30 V
Input Voltage VI ..
UPA1601 ,Power MOS FET arrayELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERlSTIC
Output Leakage Current
SYMBOL
[O ..
UPA1601CX ,Power MOS FET arrayFEATURES
0 Direct driving is possible by standard Logic IC or Microcomputer.
(4 V driving is po ..
UPD44164182F5-E40-EQ1 , 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44164362F5-E60-EQ1 , 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44165364F5-E50-EQ1 , 18M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD442000AGU-BB85X-9JH ,2M-bit(256K-word x 8-bit) Low Power SRAMFeatures• 262,144 words by 8 bits organization• Fast access time : 55, 70, 85, 100, 120 ns (MAX.)• ..
UPD442012AGY-BB70X-MJH ,2M-bit(128K-word x 16-bit) Low Power SRAMDATA SHEETMOS INTEGRATED CIRCUITµµµµ PD442012A-X2M-BIT CMOS STATIC RAM128K-WORD BY 16-BITEXTENDED ..
UPD442012AGY-BB85X-MJH ,2M-bit(128K-word x 16-bit) Low Power SRAMFeatures• 131,072 words by 16 bits organization
UPA1576H
