UPA1524H ,Napplications.
5 7
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
_ Drain to Source Voltage VDSS 80 V
V G ..
UPA1526H ,NFEATURES
. 4 V driving is possible
V 0 Large Current and Low On-state Resistance
IDipuse) = i8 A ..
UPA1527H ,P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPEFEATURES
0 4 V driving is pessible
v . Large Current and Low On-state Resistance
|D(pulse) = T8 ..
UPA1550H ,N-channel power MOS FET arrayFEATURES• Gate drive available at logic level (VGS = 4 V) High current capacity and low on-resistn ..
UPA1556AH ,Napplications.
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
"s.,--" Drain to Source Voltage Voss 10 ..
UPA1556H ,Fast switching N-channel silicon power MOS FET array.N E C ELECTRONICS INC “H3 DE. ELIEWSES UUL‘ILEI? l r T'43‘25
re.rceri 'MIN
4-21-...
1.
..
UPD441000LGU-B10X-9JH ,1M-bit(128K-word x 8-bit) Low power SRAMFeatures• 131,072 words by 8 bits organization• Fast access time : 70, 85, 100, 120, 150 ns (MAX.)• ..
UPD441000LGU-B70X-9JH ,1M-bit(128K-word x 8-bit) Low power SRAMDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD441000L-X1M-BIT CMOS STATIC RAM128K-WORD BY 8-BITEXTENDED ..
UPD441000LGW-B85X ,1M-bit(128K-word x 8-bit) Low power SRAMFeatures• 131,072 words by 8 bits organization• Fast access time : 70, 85, 100, 120, 150 ns (MAX.)• ..
UPD441000LGW-B85X ,1M-bit(128K-word x 8-bit) Low power SRAMFeatures• 131,072 words by 8 bits organization• Fast access time : 70, 85, 100, 120, 150 ns (MAX.)• ..
UPD441000LGZ-B85X-KJH ,1M-bit(128K-word x 8-bit) Low power SRAMDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD441000L-X1M-BIT CMOS STATIC RAM128K-WORD BY 8-BITEXTENDED ..
UPD4416008G5-A15-9JF ,16M-bit(2M-word x 8-bit) Fast SRAMPin Configuration (Marking Side)/xxx indicates active low signal.54-PIN PLASTIC TSOP (II) (10.16 mm ..
UPA1524H
