UPA104G-E1 ,HIGH FREQUENCY NPN TRANSISTOR ARRAYFEATURES• 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY• OUTSTANDING hFE LINEARITY• TWO PACK ..
UPA1426H ,NPN silicon epitaxial power transistor array. Low speed switching (darlington).FEATURES
Mi) INTERNAL CQNNECTIONS .. 'Hish hf80)arlirutorO
's.Mx. . . AA 'High peak purrgnt cap ..
UPA1427H ,PNP silicon epitaxial power transistor array. Low speed switching (darlington).applications demand for high peak current
capability. It Is suitablg for driving actuaters such as ..
UPA1428AH ,NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USEFEATURES• Surge Absorber built in.• Easy mount by 0.1 inch of terminal interval.• High hFE for Darl ..
UPA1428H ,NPN silicon epitaxial power transistor array. Low speed switching (darlington).FEATURES
AND INTERNAL CONNECTIONS . High hrE0)ariingtori)
. .ci. ' - High peak current capabili ..
UPA1434H ,NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONSCol ..
UPD434016AG5-12-7JF , 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
UPD434016AG5-15-7JF , 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
UPD434016ALE-12 , 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
UPD4364C-10L ,8192 X 8 BIT STATIC CMOS RAMPin Configuration
28-Pln Plastlc DIP or Mlnlllat
83001753A
Sllnllby
Izumm [max]
Mum
T ..
UPD4364C-12L ,8192 X 8 BIT STATIC CMOS RAMPin Configuration
28-Pln Plastlc DIP or Mlnlllat
83001753A
Sllnllby
Izumm [max]
Mum
T ..
UPD4364C-12LL ,8192 X 8 BIT STATIC CMOS RAMPin Configuration
28-Pln Plastlc DIP or Mlnlllat
83001753A
Sllnllby
Izumm [max]
Mum
T ..
UPA104G-UPA104G-E1
