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UNR9217PANASONICN/a500avaiSilicon NPN epitaxial planer transistor with biult-in resistor


UNR9217 ,Silicon NPN epitaxial planer transistor with biult-in resistor
UNR9217J ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector to base voltage V 50 VCBOC ..
UNR9219J ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector to base voltage V 50 VCBOC ..
UNR921TJ ,Composite DeviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitCollector cutoff c ..
UNR921TJ ,Composite DeviceTransistors with built-in ResistorUNR92XXJ Series (UN92XXJ Series)Silicon NPN epitaxial planer type ..
UNR92A1J ,Silicon NPN epitaxial planar typeElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitCollector-base ..
UPD431000ACZ-70LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UPD431000ACZ-85LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UPD431000AGU-70LL-9JH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
UPD431000AGU-70LL-9KH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
UPD431000AGU-A10-9JH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
UPD431000AGU-A10-9KH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns


UNR9217

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