UNR52ANG ,Silicon NPN epitaxial planar typeAbsolute Maximum Ratings T = 25°C 3: CollectoraParameter Symbol Rating Unit Marking Symbol: KLCol ..
UNR9110J ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR9113J ,Composite DeviceTransistors with built-in ResistorUNR911xJ Series (UN911xJ Series)Silicon PNP epitaxial planar type ..
UNR9115J ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR9116J ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment and12reduction of the number of ..
UNR9116J ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UPD42S18165LG5-A70-7JF , 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
UPD431000ACZ-70LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UPD431000ACZ-85LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UPD431000AGU-70LL-9JH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
UPD431000AGU-70LL-9KH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
UPD431000AGU-A10-9JH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
UNR52ANG
