UNR31A1 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR3213 ,Silicon NPN epitaxial planar transistorElectrical Characteristics (continued) T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit ..
UNR32A3 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR5110 ,Composite DeviceTransistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUn ..
UNR5112G ,Silicon PNP epitaxial planar typeElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR5113 ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UPD4218165LG5-A70-7JF , 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
UPD42264LA-10 , DUAL - PORT GRAPHICS BUFFER
UPD42264V-10 , DUAL - PORT GRAPHICS BUFFER
UPD424260G5-70-7JF ,CMOS 4M Bit DRAM
UPD42S18165LG5-A70-7JF , 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
UPD431000ACZ-70LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UNR31A1
