UNHZ201 ,Circuit Protector DevicesElectrical Characteristics T = 25°C ± 3°CaParameter Min Typ Max Unit Marking Symbol: H1Rated volta ..
UNR2111 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR2115 ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
UNR2116 ,Composite DeviceTransistors with built-in ResistorUNR211x Series (UN211x Series)Silicon PNP epitaxial planar typeUn ..
UNR2118 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR211D ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UPD4168C-15 , 8,192 x 8-BIT NMOS XRAM
UPD421000C-12 ,50 mA, 120 ns, 1-megabit dynamic RAM
UPD4218165LG5-A70-7JF , 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
UPD42264LA-10 , DUAL - PORT GRAPHICS BUFFER
UPD42264V-10 , DUAL - PORT GRAPHICS BUFFER
UPD424260G5-70-7JF ,CMOS 4M Bit DRAM
UNHZ201
