UN921FJ ,Silicon NPN epitaxial planar typeElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitCollector cutoff c ..
UN921KJ ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment and12reduction of the number of ..
UN921L ,Silicon NPN epitaxial planer transistorAbsolute Maximum Ratings (Ta=25˚C)nParameter Symbol Ratings UnitCollector to base voltage V 50 VCB ..
UN921LJ ,Composite DeviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitCollector cutoff c ..
UN921MJ ,Composite DeviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitCollector cutoff c ..
UN921TJ ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment and12reduction of the number of ..
UPD41257C-15 , 262144 X 1-BIT DYNAMIC NMOS RAM
UPD41464C-10 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-10.. ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UPD41464C-12 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-80 ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UPD41464L10 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UN921FJ
