UNR921TJ ,Composite DeviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitCollector cutoff c ..
UNR921TJ ,Composite DeviceTransistors with built-in ResistorUNR92XXJ Series (UN92XXJ Series)Silicon NPN epitaxial planer type ..
UNR92A1J ,Silicon NPN epitaxial planar typeElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitCollector-base ..
UP0.4C-150-R , Miniature size and rugged construction
UP04113 ,Composite DeviceAbsolute Maximum Ratings T = 25°Ca3: Collector (Tr2) 6: Collector (Tr1)SSMini6-F1 PackageParameter ..
UP04113 ,Composite DeviceComposite TransistorsUP0411x SeriesSilicon PNP epitaxial planar typeUnit: mm+0.050.20(0.30) 0.10±0. ..
UPD431000ACZ-70LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UPD431000ACZ-85LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UPD431000AGU-70LL-9JH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
UPD431000AGU-70LL-9KH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
UPD431000AGU-A10-9JH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
UPD431000AGU-A10-9KH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
UN9210J-UN9211J-UN9212J-UN9213J-UN9214J-UN9215J-UN9216J-UN9217J-UN9218J-UN9219J-UN921DJ-UN921EJ-UN921KJ-UN921LJ-UN921MJ-UN921TJ-UNR9211J-UNR9212J-UNR9215J-UNR9216J-UNR9217J-UNR9219J-UNR921TJ