UN9211 ,Silicon NPN epitaxial planer transistorFeaturesn1l Costs can be reduced through downsizing of the equipment and– –reduction of the number ..
UN9211J ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector to base voltage V 50 VCBOC ..
UN9212 ,Silicon NPN epitaxial planer transistorFeaturesn1l Costs can be reduced through downsizing of the equipment and– –reduction of the number ..
UN9212J ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment and12reduction of the number of ..
UN9213 ,Silicon NPN epitaxial planer transistorElectrical Characteristics (Ta=25˚C)nParameter Symbol Conditions min typ max UnitI V = 50V, I = 0 ..
UN9213J ,Composite DeviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitCollector cutoff c ..
UPD4110-2 ,High-speed line bufferN iirt: ELECTRONICS INC
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I4110 ..
UPD41257C-15 , 262144 X 1-BIT DYNAMIC NMOS RAM
UPD41464C-10 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-10.. ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UPD41464C-12 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-80 ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UN9210-UN9211-UN9212-UN9213-UN9214-UN9215-UN9216-UN9218-UN9219-UN921D-UN921E-UN921F-UN921L
