UN911TJ ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UN9210 ,Silicon NPN epitaxial planer transistorTransistors with built-in ResistorUN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/921E/921 ..
UN9210J ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector to base voltage V 50 VCBOC ..
UN9211 ,Silicon NPN epitaxial planer transistorFeaturesn1l Costs can be reduced through downsizing of the equipment and– –reduction of the number ..
UN9211J ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector to base voltage V 50 VCBOC ..
UN9212 ,Silicon NPN epitaxial planer transistorFeaturesn1l Costs can be reduced through downsizing of the equipment and– –reduction of the number ..
UPD4110-2 ,High-speed line bufferN iirt: ELECTRONICS INC
th‘f‘
36E 1) I EH27525 tl05HAiil7 i? INECE
APPLICATION NOTE "
I4110 ..
UPD41257C-15 , 262144 X 1-BIT DYNAMIC NMOS RAM
UPD41464C-10 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-10.. ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UPD41464C-12 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464C-80 ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UN9110J-UN9111J-UN9112J-UN9113J-UN9114J-UN9115J-UN9116J-UN9117J-UN9119J-UN911EJ-UN911FJ-UN911HJ-UN911LJ-UN911MJ-UN911TJ-UNR9110J-UNR9113J-UNR9115J-UNR9116J-UNR9117J-UNR911NJ-UNR911TJ